APTC60TDUM35PG

APTC60TDUM35PG Triple dual Common Source VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module D3 G1 G3 S1 G5 S3 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 D4 Features • D6 • • • Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTC60TDUM35P G– Rev 2 October 2012 D1 APTC60TDUM35PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14 5.13 0.42 Max 40 375 35 3.9 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz nF 518 VGS = 10V VBus = 300V ID = 72A 58 nC 222 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5Ω 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1340 µJ 1960 2192 µJ 2412 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 72 54 VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Max Unit A 1.2 6 V V/ns Tj = 25°C 580 ns Tj = 25°C 46 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 72A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2-7 APTC60TDUM35P G– Rev 2 October 2012 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC60TDUM35PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.3 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) www.microsemi.com 3-7 APTC60TDUM35P G– Rev 2 October 2012 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC60TDUM35PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 36A 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4-7 APTC60TDUM35P G– Rev 2 October 2012 RDS(on) Drain to Source ON Resistance ID, Drain Current (A) 280 ID, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 100 µs limited by RDSon 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss 10000 Coss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 72A 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=72A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 5-7 APTC60TDUM35P G– Rev 2 October 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60TDUM35PG APTC60TDUM35PG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) 60 40 tr 20 td(on) 0 0 0 20 40 60 80 100 120 0 20 40 ID, Drain Current (A) Switching Energy (mJ) Switching Energy (mJ) Eoff Eon 120 VDS=400V ID=72A TJ=125°C L=100µH 8 6 Eoff Eon 4 2 0 20 40 60 80 100 ID, Drain Current (A) 120 0 ZCS ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C hard switching 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 120 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Frequency (kHz) 100 Switching Energy vs Gate Resistance 140 20 80 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 40 60 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 60 tf 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6-7 APTC60TDUM35P G– Rev 2 October 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60TDUM35PG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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