APTC80A10SCTG

APTC80A10SCTG VDSS = 800V RDSon = 100mΩ max @ Tj = 25°C ID = 42A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated Q1 G1 OUT S1 Q2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 NTC1 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 42 32 168 ±30 100 416 17 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTC80A10SCTG – Rev 4 October, 2013 Symbol VDSS APTC80A10SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 6761 3137 161 Max 75 750 100 3.9 ±300 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz pF 273 VGS = 10V VBus = 400V ID = 42A 36 nC 138 Inductive switching @ 125°C VGS = 15V VBus = 533V ID = 42A RG = 1.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω 10 13 83 ns 35 437 µJ 417 765 µJ 513 0.3 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current Tc = 85°C IF = 60A IF = 120A Diode Forward Voltage IF = 60A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF =630A VR = 667V di/dt = 400A/µs Junction to Case Thermal Resistance Min 1000 Typ 200 60 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 1340 Tj = 125°C 4700 2.3 V ns nC 0.65 www.microsemi.com °C/W 2–9 APTC80A10SCTG – Rev 4 October, 2013 Symbol VRRM IRM IF APTC80A10SCTG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 200 400 20 1.6 2.6 800 4000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1200A/µs 56 Q Total Capacitance f = 1MHz, VR = 200V 180 f = 1MHz, VR = 400V 132 RthJC Unit V µA A 1.8 3.0 V nC Junction to Case Thermal Resistance pF 0.8 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦⎥ ⎣⎢ www.microsemi.com 3–9 APTC80A10SCTG – Rev 4 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC80A10SCTG SP4 Package outline (dimensions in mm) www.microsemi.com 4–9 APTC80A10SCTG – Rev 4 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC80A10SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 150 VGS=15&10V 100 6.5V 80 6V 60 5.5V 40 5V 4.5V 20 ID, Drain Current (A) ID, Drain Current (A) 120 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty 120 90 60 TJ=125°C TJ=25°C 30 4V 0 0 0 5 10 15 20 0 25 RDS(on) vs Drain Current Normalized to VGS=10V @ 21A VGS=10V 1.2 VGS=20V 1.1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 45 1.4 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 1 0.9 40 35 30 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 5–9 APTC80A10SCTG – Rev 4 October, 2013 RDS (on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 ON resistance vs Temperature RDS (on), Drain to Source ON resistance (Normalized) 3.0 2.0 1.5 1.0 0.5 0.0 25 75 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 100 50 75 100 125 Coss 1000 Crss 100 10 0 10 20 30 40 100ms 0 1 VGS , Gate to Source Voltage (V) Ciss Single pulse TJ =150°C TC=25°C 1 TC, Case Temperature (°C) 10000 100µs 1ms 150 Capacitance vs Drain to Source Voltage 100000 limited by R DSon 10 0.7 25 C, Capacitance (pF) VGS=10V I D= 21A 2.5 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=42A TJ=2 5 °C 12 VDS=160V VDS=400V 10 8 6 VDS=640V 4 2 0 50 0 50 100 150 200 250 300 Gate Charge (nC) VDS , Drain to Source Voltage (V) www.microsemi.com 6–9 APTC80A10SCTG – Rev 4 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTC80A10SCTG APTC80A10SCTG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 80 VDS=533V R G =1.8Ω TJ=1 25 °C L=100µH 60 t r and t f (ns) 40 td(on) 20 30 VDS=533V R G =1.8Ω TJ=1 25 °C L=100µH 20 10 0 0 20 30 40 50 60 20 70 30 ID, Drain Current (A) Switching Energy vs Current 60 70 Switching Energy vs Gate Resistance Switching Energy (mJ) Eon and Eoff (mJ) 50 3 VDS=533V R G =1.8Ω TJ=1 25 °C L=100µH 1.2 40 ID, Drain Current (A) 1.6 Eon 0.8 Eoff 0.4 VDS=533V I D=42A TJ=1 25 °C L=100µH 2.5 2 Eoff 1.5 1 Eon Eoff 0.5 0 0 20 30 40 50 60 ID, Drain Current (A) 250 200 Hard switching 150 ZCS ZVS 100 50 0 10 15 20 25 30 5 7.5 10 12.5 15 35 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) VDS=533V D=50% R G =1.8Ω TJ=1 25 °C TC =75 °C 300 2.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 0 70 400 Frequency (kHz) tr 100 TJ=150°C TJ=25°C 10 40 ID, Drain Current (A) 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 7–9 APTC80A10SCTG – Rev 4 October, 2013 td(on) and td(off) (ns) td(off) APTC80A10SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.6 0.7 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 800 30 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=75°C 20 TJ=125°C 10 TJ=175°C 600 400 0.5 1 1.5 2 2.5 3 TJ=125°C 200 0 0 TJ=75°C 3.5 VF Forward Voltage (V) TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1600 1200 800 400 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 8–9 APTC80A10SCTG – Rev 4 October, 2013 0 APTC80A10SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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