APTC80H29SCTG

APTC80H29SCTG VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies CR3A CR3B Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 NTC1 0/VBUS Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 15 11 60 ±30 290 156 17 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTC80H29SCTG – Rev 4 October, 2013 Symbol VDSS APTC80H29SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 2254 1046 54 Max 25 250 290 3.9 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz pF 91 VGS = 10V VBus = 400V ID = 15A 12 nC 46 Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 10 13 83 ns 35 146 µJ 139 255 µJ 171 0.8 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ VR=1000V 250 Tc = 85°C IF = 30A IF = 60A IF = 30A RthJC Min 1000 Maximum Peak Repetitive Reverse Voltage IF = 30A VR = 667V 30 1.9 2.2 Tj = 125°C 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 670 Tj = 125°C 2350 di/dt = 200A/µs Junction to Case Thermal Resistance 2.3 V ns nC 1.2 www.microsemi.com °C/W 2–9 APTC80H29SCTG – Rev 4 October, 2013 Symbol VRRM IRM IF APTC80H29SCTG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V Min 1200 Tj = 25°C Tj = 150°C Tc = 125°C Tj = 25°C Tj = 150°C Typ 200 1000 IF DC Forward Current VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 800V di/dt =100A/µs 30 Q Total Capacitance f = 1MHz, VR = 200V 71 f = 1MHz, VR = 400V 52 RthJC Max 10 1.5 2.1 Unit V µA A 1.8 V nC pF Junction to Case Thermal Resistance 2.7 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ www.microsemi.com 3–9 APTC80H29SCTG – Rev 4 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC80H29SCTG SP4 Package outline (dimensions in mm) www.microsemi.com 4–9 APTC80H29SCTG – Rev 4 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC80H29SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 50 40 VGS=15&10V 6.5V 30 25 ID, Drain Current (A) 6V 20 5.5V 15 5V 10 4.5V 5 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 40 30 20 TJ=125°C 10 TJ=25°C 4V 0 0 0 5 10 15 20 0 25 RDS(on) vs Drain Current Normalized to VGS=10V @ 7.5A VGS=10V 1.2 VGS=20V 1.1 3 4 5 6 7 8 DC Drain Current vs Case Temperature 16 1.4 1.3 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS (on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1 1 0.9 14 12 10 8 6 4 2 0 0.8 0 5 10 15 20 25 30 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 5–9 APTC80H29SCTG – Rev 4 October, 2013 ID, Drain Current (A) 35 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 ON resistance vs Temperature RDS (on), Drain to Source ON resistance (Normalized) 3.0 2.0 1.5 1.0 0.5 0.0 25 75 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 100 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 25 50 75 100 125 limited by R DSon 1ms 1 Single pulse TJ =150°C TC=25°C 1 1000 Coss 100 Crss 10 0 10 20 30 40 VGS , Gate to Source Voltage (V) Ciss 100ms 0 150 Capacitance vs Drain to Source Voltage 10000 100µs 10 TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V I D= 7.5A 2.5 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=15A TJ=2 5 °C 12 VDS=160V VDS=400V 10 8 VDS=640V 6 4 2 0 50 0 20 40 60 80 100 Gate Charge (nC) VDS , Drain to Source Voltage (V) www.microsemi.com 6–9 APTC80H29SCTG – Rev 4 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTC80H29SCTG APTC80H29SCTG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 80 VDS=533V R G =5Ω TJ=1 25 °C L=100µH 60 t r and t f (ns) td(on) and td(off) (ns) td(off) 40 20 30 VDS=533V R G =5Ω TJ=1 25 °C L=100µH 20 10 td(on) 0 0 5 10 15 20 5 25 ID, Drain Current (A) Switching Energy vs Current 15 20 25 Switching Energy vs Gate Resistance 1250 VDS=533V R G =5Ω TJ=1 25 °C L=100µH Eon Switching Energy (µJ) 400 10 ID, Drain Current (A) 500 Eon and Eoff (µJ) tr 300 Eoff 200 100 VDS=533V I D=15A TJ=1 25 °C L=100µH 1000 Eoff 750 500 Eon 250 Eoff 0 0 5 10 15 20 ID, Drain Current (A) 25 0 10 20 30 40 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 300 ZVS ZCS 250 200 VDS=533V D=50% R G =5Ω TJ=1 25 °C TC =75 °C 150 100 50 Hard Switching 0 4 6 8 10 12 14 ID, Drain Current (A) www.microsemi.com 7–9 APTC80H29SCTG – Rev 4 October, 2013 Frequency (kHz) 350 APTC80H29SCTG Typical SiC Diode Performance Curve maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 2.8 D = 0.9 2.4 2 1.6 1.2 0.7 0.5 0.3 0.8 0.4 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) Forward Characteristics Capacitance vs.Reverse Voltage 400 350 15 TJ=25°C C, Capacitance (pF) IF Forward Current (A) 20 10 TJ=150°C 5 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VF Forward Voltage (V) 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 8–9 APTC80H29SCTG – Rev 4 October, 2013 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APTC80H29SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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