APTC80H29T3G

APTC80H29T3G VDSS = 800V RDSon = 290m max @ Tj = 25°C ID = 15A @ Tc = 25°C Full - Bridge Super Junction MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Super junction MOSFET - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per super junction MOSFET) ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 15 11 60 ±30 290 156 17 0.5 670 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTC80H29T3G – Rev 3 November, 2017 Symbol VDSS APTC80H29T3G Electrical Characteristics (per super junction MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Min Typ 2.1 3 Max 25 290 3.9 ±100 Unit µA m V nA Max Unit Dynamic Characteristics (per super junction MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 2254 1046 54 pF 90 VGS = 10V VBus = 400V ID = 15A 11 nC 45 Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5 Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 10 13 83 ns 35 243 µJ 139 425 µJ 171 0.80 °C/W Source - Drain diode ratings and characteristics (per super junction MOSFET) Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 15 11 VGS = 0V, IS = - 15A IS = - 15A ; VR = 400V diS/dt = 100A/µs Max A 1.2 6 550 15 Unit V V/ns ns µC www.microsemi.com 2–7 APTC80H29T3G – Rev 3 November, 2017  dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR  VDSS Tj  150°C IS  - 15A di/dt  100A/µs APTC80H29T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1   exp B25 / 85   T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC80H29T3G – Rev 3 November, 2017 Package outline (dimensions in mm) APTC80H29T3G Typical performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 40 VGS=15&10V 6.5V 30 25 6V 20 5.5V 15 5V 10 4.5V 5 40 TJ=-55°C 30 20 TJ=125°C TJ=25°C 10 TJ=125°C 4V TJ=-55°C 0 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 16 Normalized to VGS=10V @ 7.5A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=10V 1.2 VGS=20V 1.1 1 0.9 14 12 10 8 6 4 2 0 0.8 0 5 10 15 20 25 30 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 4–7 APTC80H29T3G – Rev 3 November, 2017 ID, Drain Current (A) 35 ID, Drain Current (A) 50 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 100 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 -50 0 50 100 limited by RDSon 1ms 1 Single pulse TJ=150°C TC=25°C 1 1000 Coss 100 Crss 10 0 VGS, Gate to Source Voltage (V) Ciss 100ms 0 150 Capacitance vs Drain to Source Voltage 10000 100µs 10 TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 7.5A 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=15A TJ=25°C 14 VDS=160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC) 5–7 APTC80H29T3G – Rev 3 November, 2017 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80H29T3G APTC80H29T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) 20 30 VDS=533V RG=5Ω TJ=125°C L=100µH 20 10 0 0 5 10 15 20 ID, Drain Current (A) 25 5 600 500 Eon Switching Energy (µJ) Eon and Eoff (µJ) 1250 VDS=533V RG=5Ω TJ=125°C L=100µH 700 10 15 20 ID, Drain Current (A) 400 300 Eoff 200 25 Switching Energy vs Gate Resistance Switching Energy vs Current 800 100 VDS=533V ID=15A TJ=125°C L=100µH 1000 Eoff 750 Eon 500 250 Eoff 0 0 5 10 15 20 ID, Drain Current (A) 0 25 Operating Frequency vs Drain Current 350 ZVS 300 ZCS 250 VDS=533V D=50% RG=5Ω TJ=125°C TC=75°C 200 150 100 Hard switching 50 0 4 6 8 10 12 ID, Drain Current (A) 14 10 20 30 40 Gate Resistance (Ohms) 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 400 Frequency (kHz) tr 100 TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTC80H29T3G – Rev 3 November, 2017 td(on) and td(off) (ns) td(off) 80 APTC80H29T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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