APTCV50H60T3G

APTCV50H60T3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full – Bridge Power module 13 Super Junction MOSFET Q2, Q4: VDSS = 600V ; ID = 49A @ Tc = 25°C 14 Application Q1 Q3 CR1  Solar converter CR3 18 11 19 10 22 7 23 8 Q4 Q2 26 4 27 3 29 31 30 32 NTC Features  Q2, Q4 Super junction MOSFET - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated  Q1, Q3 Trench & Field Stop IGBT3 - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current 16 15     Top switches : Trench + Field Stop IGBT3 Bottom switches : Super junction MOSFET Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits     Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1 - 11 APTCV50H60T3G – Rev 2 November, 2017 All multiple inputs and outputs must be shorted together 13/14 ; 22/23 ; 29/30 ; 31/32 APTCV50H60T3G 1. Top switches 1.1 Top Trench + Field Stop IGBT3 characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C 110 45 200 Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance pF ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 0.85 www.microsemi.com °C/W 2 - 11 November, 2017 Test Conditions APTCV50H60T3G – Rev 2 Symbol Characteristic APTCV50H60T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Typ Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VR=600V Diode Forward Voltage IF = 30A IF = 60A IF = 30A Tj = 125°C IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C 25 Tj = 125°C Tj = 25°C 160 35 Tj = 125°C 480 trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min Tc = 80°C 30 1.8 2.1 1.5 Junction to Case Thermal resistance Max Unit 600 25 V µA A 2.3 V ns nC 1.2 °C/W 2. Bottom switches 2.1 Bottom Super junction MOSFET characteristics Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 290 15 3 1900 Unit V A V m W A mJ Electrical Characteristics Test Conditions Min Typ 2.1 40 3 VGS = 0V,VDS = 600V VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 250 45 3.9 100 Unit µA m V nA November, 2017 Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current www.microsemi.com 3 - 11 APTCV50H60T3G – Rev 2 Symbol IDSS RDS(on) VGS(th) IGSS APTCV50H60T3G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Unit nF 34 nC 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 4.7 Turn-off Delay Time Max 150 VGS = 10V VBus = 300V ID = 49A Rise Time Typ 7.2 0.29 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7 675 µJ 520 1100 µJ 635 0.5 °C/W Max Unit k % K % 3. Temperature sensor (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R 25   1 1    exp B25 / 85   T25 T   Typ 50 5 3952 4 T: Thermistor temperature RT: Thermistor value at T 4. Package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Max 150* TJmax -25 125 125 3 110 Unit V °C N.m g November, 2017 Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Tj=175°C for IGBT www.microsemi.com 4 - 11 APTCV50H60T3G – Rev 2 Symbol VISOL TJ TJOP TSTG TC Torque Wt APTCV50H60T3G 5. Package outline (dimensions in mm) www.microsemi.com 5 - 11 APTCV50H60T3G – Rev 2 November, 2017 See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com APTCV50H60T3G 6. Top switches curves 6.1 Top Trench + Field Stop IGBT3 typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 IC (A) IC (A) 80 TJ = 150°C TJ=125°C Eoff 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) VGE (V) 1.5 0.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 IGBT 0.9 0.7 November, 2017 0.8 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 11 APTCV50H60T3G – Rev 2 Thermal Impedance (°C/W) 1 APTCV50H60T3G 6.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 120 100 80 T J=125°C 60 40 T J=25°C 20 T J=-55°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) November, 2017 0.4 www.microsemi.com 7 - 11 APTCV50H60T3G – Rev 2 Thermal Impedance (°C/W) 1.4 APTCV50H60T3G 7. Bottom switches curves 7.1 Bottom Super junction MOSFET typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C TJ=-55°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 1.3 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) November, 2017 0 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 8 - 11 APTCV50H60T3G – Rev 2 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) November, 2017 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 50A www.microsemi.com 9 - 11 APTCV50H60T3G – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV50H60T3G APTCV50H60T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 td(off) 50 tr and tf (ns) tf 40 30 tr 20 td(on) 20 10 0 0 10 20 30 40 50 0 60 70 80 0 10 20 ID, Drain Current (A) Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 1.6 Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 50 60 70 80 Eoff Eon 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Operating Frequency vs Drain Current ZVS 200 ZCS 150 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 100 hard switching 50 20 30 40 50 Source to Drain Diode Forward Voltage 1000 0 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) November, 2017 5 10 Gate Resistance (Ohms) 300 250 0 IDR, Reverse Drain Current (A) 0 Frequency (kHz) 40 Switching Energy vs Gate Resistance 2.5 Switching Energy vs Current 2 30 ID, Drain Current (A) www.microsemi.com 10 - 11 APTCV50H60T3G – Rev 2 td(on) and td(off) (ns) 120 APTCV50H60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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