APTCV60HM45BC20T3G
Full – Bridge + boost chopper
CoolMOS & Trench + Field Stop IGBT3
Power module
Trench & Field Stop IGBT3 Q1, Q3:
VCES = 600V ; IC = 50A @ Tc = 80°C
CoolMOS™ Q2, Q4:
VDSS = 600V
RDSon = 45m max @ Tj = 25°C
Application
Solar converter
Features
Q2, Q4 & Q5 CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Q1, Q3 Trench & Field Stop IGBT3
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
28 27 26
24
22 21
-
19 18 17
30
15
31
32
13
1
3
4
5
7
9 10
12
All multiple inputs and outputs must be shorted together
7/24 ; 5/26
FWD SiC Schottky Diode (CR5)
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
All ratings @ Tj = 25°C unless otherwise specified
www.microsemi.com
1 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Top switches : Trench + Field Stop IGBT3
Bottom switches : CoolMOS™
Boost chopper : CoolMOS™
APTCV60HM45BC20T3G
1. Top switches
1.1 Top Trench + Field Stop IGBT3 characteristics (per IGBT)
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn-off Switching Energy
Isc
RthJC
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=50A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
VGE = ±15V
Tj = 25°C
VBus = 300V
IC = 50A
Tj = 150°C
RG = 8.2
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal resistance
3150
200
95
pF
0.5
µC
110
45
200
40
ns
120
50
250
ns
60
1.35
mJ
1.75
250
A
0.85
www.microsemi.com
°C/W
2 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Symbol Characteristic
APTCV60HM45BC20T3G
1.2 Top diode characteristics (CR1, CR3) (per diode)
Symbol Characteristic
VRRM
IRM
IF
VF
Maximum Reverse Leakage Current
Min
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
600
VR=600V
DC Forward Current
trr
RthJC
Test Conditions
Maximum Peak Repetitive Reverse Voltage
IF = 25A
VR = 400V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
25
500
Tc = 80°C
IF = 25A
IF = 50A
IF = 25A
Unit
Tj = 125°C
25
1.8
2.2
1.6
Tj = 25°C
30
Tj = 125°C
Tj = 25°C
175
55
Tj = 125°C
485
Junction to Case Thermal resistance
µA
A
2.2
V
ns
nC
1.4
°C/W
2. Bottom switches
2.1 Bottom CoolMOS™ characteristics (Per CoolMOS™)
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Unit
V
A
V
m
W
A
mJ
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
www.microsemi.com
Typ
Tj = 25°C
Tj = 125°C
2.1
40
3
Max
250
500
45
3.9
100
Unit
µA
m
V
nA
3 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Symbol Characteristic
APTCV60HM45BC20T3G
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal resistance
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Min
Typ
7.2
8.5
Max
Unit
nF
150
VGS = 10V
VBus = 300V
ID = 49A
nC
34
51
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
30
ns
100
45
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
675
µJ
520
1096
µJ
635
0.5
°C/W
Max
Unit
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
49
38
VGS = 0V, IS = - 49A
IS = - 49A
VR = 350V
diS/dt = 100A/µs
A
1.2
4
V
V/ns
Tj = 25°C
600
ns
Tj = 25°C
17
µC
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Unit
V
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 49A
di/dt 100A/µs
VR VDSS
Tj 150°C
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
www.microsemi.com
Tc = 25°C
A
V
m
W
A
mJ
4 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
3. Boost chopper Q5, CR5
3.1 Q5 CoolMOS™ characteristics
Absolute maximum ratings
APTCV60HM45BC20T3G
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Input Capacitance
Ciss
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal resistance
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Min
Typ
7.2
8.5
nF
150
VGS = 10V
VBus = 300V
ID = 49A
nC
34
51
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
30
ns
100
45
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
405
µJ
520
658
µJ
635
0.5
°C/W
Max
Unit
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
49
38
VGS = 0V, IS = - 49A
IS = - 49A
VR = 350V
diS/dt = 100A/µs
A
1.2
4
V
V/ns
Tj = 25°C
600
ns
Tj = 25°C
17
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 49A
di/dt 100A/µs
VR VDSS
Tj 150°C
www.microsemi.com
5 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTCV60HM45BC20T3G
3.2 SiC Chopper diode characteristics (CR5)
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
QC
Total Capacitive Charge
C
Total Capacitance
RthJC
Test Conditions
Min
600
Typ
Max
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
IF = 20A
Tj = 175°C
IF = 20A, VR = 300V
di/dt = 800A/µs
20
40
20
1.6
2
120
600
f = 1MHz, VR = 200V
130
f = 1MHz, VR = 400V
100
VR=600V
µA
A
1.8
2.4
28
Junction to Case Thermal resistance
Unit
V
V
nC
pF
1.5
°C/W
4. By pass diode (CR6)
Absolute maximum ratings
Symbol
VR
VRRM
IF
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
DC Forward Current
Non-Repetitive Forward Surge Current
t=10ms
Max ratings
Unit
1600
V
40
400
A
TC = 80°C
TJ = 45°C
Electrical Characteristics
Symbol Characteristic
Test Conditions
IR
Reverse Current
VR = 1600V
VF
Forward Voltage
IF = 40A
VT
rT
RthJC
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
Max
20
2
1.3
1.1
0.8
10.5
On – state Voltage
On – state Slope resistance
Junction to Case Thermal resistance
Unit
µA
mA
V
V
mΩ
1.5
°C/W
Max
Unit
k
%
K
%
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R 25
Typ
50
5
3952
4
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B 25 / 85
T25 T
www.microsemi.com
6 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
5. Temperature sensor
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
APTCV60HM45BC20T3G
6. Package characteristics
Symbol
VISOL
TJ
TSTG
TC
3
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Min
4000
-40
-40
-40
2
Typ
Max
150*
125
100
3
110
Unit
V
°C
N.m
g
* Tj=175°C for Trench & Field Stop IGBT3
www.microsemi.com
7 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
7. SP3 Package outline (dimensions in mm)
APTCV60HM45BC20T3G
8. Top switches curves
8.1 Top Trench + Field Stop IGBT3 typical performance curves (per IGBT)
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ=25°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE=9V
0
2
2.5
0
3
3.5
Eoff (mJ)
2.5
IC (A)
1
1.5
2
VCE (V)
2.5
3
3.5
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
3
TJ=25°C
80
0.5
Energy losses vs Collector Current
Transfert Characteristics
100
VGE=19V
80
TJ=125°C
IC (A)
IC (A)
80
TJ = 150°C
60
40
2
1.5
1
TJ=150°C
20
0.5
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
20
40
100
Reverse Bias Safe Operating Area
3
100
2.5
75
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
1.5
80
125
IC (A)
Eoff (mJ)
Switching Energy Losses vs Gate Resistance
3.5
2
60
IC (A)
VGE (V)
50
VGE=15V
TJ=150°C
RG=8.2Ω
25
1
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.6
D = 0.9
0.7
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
www.microsemi.com
8 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Thermal Impedance (°C/W)
1
APTCV60HM45BC20T3G
8.2 Top diode characteristics (CR1, CR3) (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
1.4
0.9
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
40
TJ=125°C
30
20
TJ=25°C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
VF, Anode to Cathode Voltage (V)
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9 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
IF, Forward Current (A)
50
APTCV60HM45BC20T3G
9.
Bottom CoolMOS™ switches curves (per CoolMOS™)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
D = 0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
100
80
60
40
TJ=125°C
20
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 50A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1.3
VGS=20V
1.05
1
0.95
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
0.9
40
30
20
10
0
0
20
40
60
80
100 120 140
ID, Drain Current (A)
www.microsemi.com
25
50
75
100
125
TC, Case Temperature (°C)
150
10 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
ID, Drain Current (A)
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1000
1.0
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
0.9
0.8
0.7
limited by RDSon
100
100 µs
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 50A
2.5
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
12
ID=50A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
20
40
60 80 100 120 140 160
Gate Charge (nC)
11 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTCV60HM45BC20T3G
APTCV60HM45BC20T3G
Delay Times vs Current
140
Rise and Fall times vs Current
70
td(off)
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
60
50
tr and tf (ns)
tf
40
30
tr
20
td(on)
20
10
0
0
0
10
20 30 40 50
60 70 80
0
10
20
ID, Drain Current (A)
1.6
Eon
1.2
Eoff
0.8
0.4
VDS=400V
ID=50A
TJ=125°C
L=100µH
2
1.5
60
70
80
Eoff
Eon
1
0.5
0
0
0
10
20 30 40 50 60
ID, Drain Current (A)
70
80
0
ZVS
ZCS
200
VDS=400V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
hard
switching
100
50
0
5
20
30
40
50
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current
250
10
Gate Resistance (Ohms)
300
Frequency (kHz)
50
Switching Energy vs Gate Resistance
2.5
Switching Energy (mJ)
Switching Energy (mJ)
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
40
ID, Drain Current (A)
Switching Energy vs Current
2
30
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
www.microsemi.com
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
12 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
td(on) and td(off) (ns)
120
APTCV60HM45BC20T3G
10. CoolMOS™ chopper curves
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
D = 0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
100
80
60
40
TJ=125°C
20
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 50A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1.3
VGS=20V
1.05
1
0.95
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
0.9
40
30
20
10
0
0
20
40
60
80
100 120 140
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
13 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
ID, Drain Current (A)
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1000
1.0
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
0.9
0.8
0.7
limited by RDSon
100
100 µs
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 50A
2.5
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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12
ID=50A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
20
40
60 80 100 120 140 160
Gate Charge (nC)
14 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTCV60HM45BC20T3G
APTCV60HM45BC20T3G
Delay Times vs Current
140
Rise and Fall times vs Current
70
td(off)
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
60
50
tr and tf (ns)
40
30
tr
20
td(on)
20
10
0
0
0
10
20 30 40 50
60 70 80
0
10
20
ID, Drain Current (A)
1.2
Eoff
Eon
0.8
40
50
60
70
80
Switching Energy vs Gate Resistance
2
Switching Energy (mJ)
Switching Energy (mJ)
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
30
ID, Drain Current (A)
Switching Energy vs Current
1.6
0.4
VDS=400V
ID=50A
TJ=125°C
L=100µH
1.5
Eoff
1
Eon
0.5
0
0
0
10
20 30 40 50 60
ID, Drain Current (A)
70
80
0
VDS=400V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZVS
200
150
ZCS
100
hard
switching
50
0
5
20
30
40
50
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current
250
10
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
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TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
15 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
td(on) and td(off) (ns)
120
APTCV60HM45BC20T3G
11. Chopper SiC diode curves
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
D = 0.9
1.4
1.2
0.7
1
0.5
0.8
0.6
0.3
0.4
0.1
0.2
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
400
30
TJ=75°C
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
TJ=175°C
20
TJ=125°C
10
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
TJ=175°C
350
300
TJ=125°C
250
200
TJ=75°C
150
100
TJ=25°C
50
0
200
300
400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
600
400
200
0
1
10
100
VR Reverse Voltage
1000
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16 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
C, Capacitance (pF)
800
APTCV60HM45BC20T3G
12. Typical by pass CR6 diode curves
Forward Characteristic
Non-Repetitive Forward Surge Current
400
80
300
TJ=125°C
IFSM (A)
IF (A)
60
40
TJ=45°C
TJ=125°C
200
100
20
TJ=25°C
0
0.0
0.4
0.8
1.2
1.6
50Hz
80% VRRM
0
0.01
2.0
0.1
t (s)
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
1.4
0.9
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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17 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Rectangular Pulse Duration in Seconds
APTCV60HM45BC20T3G
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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18 - 18
APTCV60HM45BC20T3G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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