APTCV60HM45BT3G

APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS™ Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application  Solar converter Features  Q2, Q4 & Q5 CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated  Q1, Q3 Trench & Field Stop IGBT3 - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current Top switches : Trench + Field Stop IGBT3 Bottom switches : CoolMOS™ Boost chopper : CoolMOS™ 28 27 26 24 22 21     19 18 17 30 15 31 32 13 1 3 4 5 7 9 10 12 Benefits  Optimized conduction & switching losses  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com All ratings @ Tj = 25°C unless otherwise specified www.microsemi.com 1 - 15 APTCV60HM45BCT3G – Rev 2 October, 2012 All multiple inputs and outputs must be shorted together 7/24 ; 5/26 Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration APTCV60HM45BT3G 1. Top switches 1.1 Top Trench + Field Stop IGBT3 characteristics (per IGBT) Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn-off Switching Energy RthJC Short Circuit data VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V Tj = 25°C VBus = 300V IC = 50A Tj = 150°C RG = 8.2 VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal resistance 3150 200 95 pF 0.5 µC 110 45 200 40 ns 120 50 250 ns 60 1.35 mJ 1.75 250 A 0.85 °C/W October, 2012 Isc Test Conditions www.microsemi.com 2 - 15 APTCV60HM45BCT3G – Rev 2 Symbol Characteristic APTCV60HM45BT3G 1.2 Top diode characteristics (CR1, CR3) (per diode) Symbol Characteristic VRRM Test Conditions Min IRM Maximum Reverse Leakage Current IF VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Typ Max 600 Maximum Peak Repetitive Reverse Voltage IF = 25A VR = 400V di/dt =200A/µs V Tj = 25°C Tj = 125°C 25 500 Tc = 80°C IF = 25A IF = 50A IF = 25A Unit Tj = 125°C 25 1.8 2.2 1.6 Tj = 25°C 30 Tj = 125°C Tj = 25°C 175 55 Tj = 125°C 485 Junction to Case Thermal resistance µA A 2.2 V ns nC 1.4 °C/W 2. Bottom switches 2.1 Bottom CoolMOS™ characteristics (Per CoolMOS™) Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V m W A mJ Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V www.microsemi.com Typ 2.1 40 3 Max 250 500 45 3.9 100 Unit µA m V nA October, 2012 IDSS Test Conditions VGS = 0V,VDS = 600V 3 - 15 APTCV60HM45BCT3G – Rev 2 Symbol Characteristic APTCV60HM45BT3G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 Max Unit nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 675 µJ 520 1096 µJ 635 0.5 °C/W Max Unit Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 49 38 VGS = 0V, IS = - 49A IS = - 49A VR = 350V diS/dt = 100A/µs A 1.2 4 V V/ns Tj = 25°C 600 ns Tj = 25°C 17 µC Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 49A di/dt  100A/µs VR  VDSS Tj  150°C ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy www.microsemi.com Tc = 25°C A V m W A mJ 4 - 15 APTCV60HM45BCT3G – Rev 2 Symbol VDSS October, 2012 3. Boost chopper Q5, CR5 3.1 Q5 CoolMOS™ characteristics Absolute maximum ratings APTCV60HM45BT3G Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 675 µJ 520 1096 µJ 635 0.5 °C/W Max Unit Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Tc = 25°C Tc = 80°C Typ 49 38 VGS = 0V, IS = - 49A IS = - 49A VR = 350V diS/dt = 100A/µs A 1.2 4 V V/ns Tj = 25°C 600 ns Tj = 25°C 17 µC October, 2012 trr Test Conditions  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 49A di/dt  100A/µs VR  VDSS Tj  150°C www.microsemi.com 5 - 15 APTCV60HM45BCT3G – Rev 2 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTCV60HM45BT3G 3.2 Chopper diode characteristics (CR5) Symbol Characteristic VRRM IRM IF VF Test Conditions Maximum Reverse Leakage Current VR=600V Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 60A VR = 400V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 25 500 Tc = 80°C IF = 60A IF = 120A IF = 60A Diode Forward Voltage Typ 600 DC Forward Current trr RthJC Min Maximum Peak Repetitive Reverse Voltage Tj = 125°C 60 1.7 2 1.4 Tj = 25°C 70 Tj = 125°C Tj = 25°C 140 100 Tj = 125°C 690 Junction to Case Thermal resistance µA A 2.3 V ns nC 0.85 °C/W 4. By pass diode (CR6) Absolute maximum ratings Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current t=10ms Max ratings Unit 1600 V 40 400 A TC = 80°C TJ = 45°C Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 1600V VF Forward Voltage IF = 40A VT rT RthJC Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 20 2 1.3 1.1 0.8 10.5 On – state Voltage On – state Slope resistance Junction to Case Thermal resistance Unit µA mA V V mΩ 1.5 °C/W Max Unit k % K % Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R 25 Typ 50 5 3952 4 T: Thermistor temperature   1 1  RT: Thermistor value at T exp B 25 / 85     T25 T   www.microsemi.com 6 - 15 APTCV60HM45BCT3G – Rev 2 Symbol R25 ∆R25/R25 B25/85 ∆B/B October, 2012 5. Temperature sensor Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). APTCV60HM45BT3G 6. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 150* 125 100 3 110 Unit V °C N.m g * Tj=175°C for Trench & Field Stop IGBT3 www.microsemi.com 7 - 15 APTCV60HM45BCT3G – Rev 2 October, 2012 7. SP3 Package outline (dimensions in mm) APTCV60HM45BT3G 8. Top switches curves 8.1 Top Trench + Field Stop IGBT3 typical performance curves (per IGBT) Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 Eoff (mJ) 2.5 IC (A) 1 1.5 2 VCE (V) 2.5 3 3.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 TJ=125°C IC (A) IC (A) 80 TJ = 150°C 60 40 2 1.5 1 TJ=150°C 20 0.5 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 20 40 100 Reverse Bias Safe Operating Area 3 100 2.5 75 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1.5 80 125 IC (A) Eoff (mJ) Switching Energy Losses vs Gate Resistance 3.5 2 60 IC (A) VGE (V) 50 VGE=15V TJ=150°C RG=8.2Ω 25 1 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 D = 0.9 October, 2012 0.8 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 8 - 15 APTCV60HM45BCT3G – Rev 2 Thermal Impedance (°C/W) 1 APTCV60HM45BT3G 8.2 Top diode characteristics (CR1, CR3) (per diode) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 0.9 1.2 0.7 1 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 40 TJ=125°C 30 20 TJ=25°C 10 0 0.5 1.0 1.5 2.0 2.5 VF, Anode to Cathode Voltage (V) October, 2012 0.0 www.microsemi.com 9 - 15 APTCV60HM45BCT3G – Rev 2 IF, Forward Current (A) 50 APTCV60HM45BT3G 9. Bottom switches and CoolMOS™ chopper curves (per CoolMOS™) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) October, 2012 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 150 10 - 15 APTCV60HM45BCT3G – Rev 2 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) October, 2012 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 50A 2.5 11 - 15 APTCV60HM45BCT3G – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV60HM45BT3G APTCV60HM45BT3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) tf 40 30 tr 20 td(on) 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 ZCS 200 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 150 hard switching 100 50 0 5 30 40 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current ZVS 20 Gate Resistance (Ohms) 300 250 10 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) www.microsemi.com TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) October, 2012 0 Frequency (kHz) 50 Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 40 ID, Drain Current (A) Switching Energy vs Current 2 30 12 - 15 APTCV60HM45BCT3G – Rev 2 td(on) and td(off) (ns) 120 APTCV60HM45BT3G 10. Chopper diode curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 175 150 TJ=125°C 125 100 TJ=25°C 75 50 25 0 0.0 0.5 1.0 1.5 2.0 150 125 30 A 100 60 A 75 50 2.5 0 200 400 600 800 -diF/dt (A/µs) QRR vs. Current Rate Charge TJ=125°C VR=400V 1.5 120 A 60 A 30 A 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 2.0 -diF/dt (A/µs) TJ=125°C VR=400V 120 A 1000 1200 IRRM vs. Current Rate of Charge 40 TJ=125°C VR=400V 35 30 120 A 25 60 A 20 15 10 5 30 A 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage October, 2012 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 13 - 15 APTCV60HM45BCT3G – Rev 2 C, Capacitance (pF) 500 APTCV60HM45BT3G 11. Typical by pass CR6 diode curves Forward Characteristic Non-Repetitive Forward Surge Current 400 80 300 TJ=125°C IFSM (A) IF (A) 60 40 TJ=45°C TJ=125°C 200 100 20 TJ=25°C 0 0.0 0.4 0.8 1.2 1.6 50Hz 80% VRRM 0 0.01 2.0 0.1 t (s) VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 0.9 1.2 0.7 1 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 www.microsemi.com 14 - 15 APTCV60HM45BCT3G – Rev 2 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. October, 2012 Rectangular Pulse Duration in Seconds APTCV60HM45BT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. 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