APTCV60HM45RT3G
Trench & Field Stop IGBT3 Q1, Q3:
VCES = 600V ; IC = 50A @ Tc = 80°C
Full bridge + rectifier bridge
CoolMOS & Trench + Field Stop IGBT3
Power Module
CoolMOS™ Q2, Q4:
VDSS = 600V
RDSon = 45m max @ Tj = 25°C
Application
Solar converter
Features
Q2, Q4 CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Q1, Q3 Trench & Field Stop IGBT3
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
All multiple inputs and outputs must be shorted together
7/24 ; 5/26
Very low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
October, 2012
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 - 13
APTCV60HM45RT3G – Rev 1
Top switches : Trench + Field Stop IGBT3
Bottom switches : CoolMOS™
APTCV60HM45RT3G
1. Top switches
1.1 Top Trench + Field Stop IGBT3 characteristics (per IGBT)
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Tf
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=50A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
VGE = ±15V
Tj = 25°C
VBus = 300V
IC = 50A
Tj = 150°C
RG = 8.2
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal resistance
3150
200
95
pF
0.5
µC
110
45
200
ns
40
120
50
250
ns
60
1.35
mJ
1.75
250
A
0.85
°C/W
October, 2012
Td(on)
Tr
Td(off)
Test Conditions
www.microsemi.com
2 - 13
APTCV60HM45RT3G – Rev 1
Symbol Characteristic
APTCV60HM45RT3G
1.2 Top diode characteristics (CR1, CR3) (per diode)
Symbol Characteristic
VRRM
Test Conditions
Min
IRM
Maximum Reverse Leakage Current
IF
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Typ
Max
600
Maximum Peak Repetitive Reverse Voltage
IF = 25A
VR = 400V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
25
500
Tc = 80°C
IF = 25A
IF = 50A
IF = 25A
Unit
Tj = 125°C
25
1.8
2.2
1.6
Tj = 25°C
30
Tj = 125°C
Tj = 25°C
175
55
Tj = 125°C
485
Junction to Case Thermal resistance
µA
A
2.2
V
ns
nC
1.4
°C/W
2. Bottom switches
2.1 Bottom CoolMOS™ characteristics (Per CoolMOS™)
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Unit
V
A
V
m
W
A
mJ
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS = 600V
Min
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
www.microsemi.com
Typ
2.1
40
3
Max
250
500
45
3.9
100
Unit
µA
m
V
nA
October, 2012
IDSS
Test Conditions
VGS = 0V,VDS = 600V
3 - 13
APTCV60HM45RT3G – Rev 1
Symbol Characteristic
APTCV60HM45RT3G
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal resistance
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Min
Typ
7.2
8.5
Max
Unit
nF
150
VGS = 10V
VBus = 300V
ID = 49A
nC
34
51
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
30
ns
100
45
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
675
µJ
520
1096
µJ
635
0.5
°C/W
Max
Unit
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
49
38
A
VGS = 0V, IS = - 49A
IS = - 49A
VR = 350V
diS/dt = 100A/µs
1.2
4
V
V/ns
Tj = 25°C
600
ns
Tj = 25°C
17
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 49A
di/dt 100A/µs
VR VDSS
Tj 150°C
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Duty cycle = 50%
Maximum Average Forward Current
Non-Repetitive Forward Surge Current
8.3ms
Max ratings
Unit
600
V
40
320
A
TC = 80°C
TJ = 45°C
Electrical Characteristics
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
Test Conditions
IF = 30A
IF = 60A
Tj = 125°C
IF = 30A
Tj = 25°C
VR = 600V
Tj = 125°C
www.microsemi.com
Min
Typ
1.8
2.2
1.5
Max
2.2
Unit
V
250
500
µA
4 - 13
APTCV60HM45RT3G – Rev 1
Symbol
VR
VRRM
IF(AV)
IFSM
October, 2012
3. Rectifier bridge (per diode)
Absolute maximum ratings
APTCV60HM45RT3G
Dynamic Characteristics
Symbol Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF=1A,VR=30V
di/dt = 100A/µs
IF = 30A
VR = 400V
di/dt = 200A/µs
IRRM
Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
RthJC
Junction to Case Thermal Resistance
IF = 30A
VR = 400V
Min
Tj = 25°C
Typ
Max
22
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
Tj = 125°C
35
480
Tj = 25°C
3
Tj = 125°C
6
Tj = 125°C
di/dt = 1000A/µs
Unit
ns
ns
nC
A
85
ns
920
µC
20
A
1.2
°C/W
4. Thermal and package characteristics
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
Min
4000
-40
-40
-40
2
Typ
Max
Unit
V
T25 = 298.15 K
TC=100°C
RT
R 25
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B 25 / 85
T25 T
Package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
To heatsink
M4
175
125
100
3
110
°C
N.m
g
October, 2012
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
www.microsemi.com
5 - 13
APTCV60HM45RT3G – Rev 1
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTCV60HM45RT3G
www.microsemi.com
6 - 13
APTCV60HM45RT3G – Rev 1
October, 2012
SP3 Package outline (dimensions in mm)
APTCV60HM45RT3G
5. Top switches curves
5.1 Top Trench + Field Stop IGBT3 typical performance curves (per IGBT)
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ=25°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE=9V
0
2
2.5
0
3
3.5
Eoff (mJ)
2.5
IC (A)
1
1.5
2
VCE (V)
2.5
3
3.5
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
3
TJ=25°C
80
0.5
Energy losses vs Collector Current
Transfert Characteristics
100
VGE=19V
80
TJ=125°C
IC (A)
IC (A)
80
TJ = 150°C
60
40
2
1.5
1
TJ=150°C
20
0.5
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
20
40
100
Reverse Bias Safe Operating Area
3
100
2.5
75
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
1.5
80
125
IC (A)
Eoff (mJ)
Switching Energy Losses vs Gate Resistance
3.5
2
60
IC (A)
VGE (V)
50
VGE=15V
TJ=150°C
RG=8.2Ω
25
1
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
D = 0.9
October, 2012
0.8
0.7
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
www.microsemi.com
7 - 13
APTCV60HM45RT3G – Rev 1
Thermal Impedance (°C/W)
1
APTCV60HM45RT3G
5.2 Top diode characteristics (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
1.4
0.9
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
40
TJ=125°C
30
20
TJ=25°C
10
0
0.5
1.0
1.5
2.0
2.5
VF, Anode to Cathode Voltage (V)
October, 2012
0.0
www.microsemi.com
8 - 13
APTCV60HM45RT3G – Rev 1
IF, Forward Current (A)
50
APTCV60HM45RT3G
6. Bottom switches curves (per CoolMOS™)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
100
80
60
40
TJ=125°C
20
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 50A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1.3
VGS=20V
1.05
1
0.95
ID, DC Drain Current (A)
0.9
40
30
20
10
0
0
20
40
60
80
100 120 140
ID, Drain Current (A)
www.microsemi.com
25
50
75
100
125
TC, Case Temperature (°C)
October, 2012
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
150
9 - 13
APTCV60HM45RT3G – Rev 1
ID, Drain Current (A)
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1000
1.0
ID, Drain Current (A)
0.9
0.8
0.7
limited by RDSon
100
100 µs
0.6
1 ms
Single pulse
TJ=150°C
TC=25°C
10
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
12
ID=50A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
20
40
60 80 100 120 140 160
Gate Charge (nC)
October, 2012
VGS(TH), Threshold Voltage
(Normalized)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
C, Capacitance (pF)
VGS=10V
ID= 50A
2.5
10 - 13
APTCV60HM45RT3G – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTCV60HM45RT3G
APTCV60HM45RT3G
Delay Times vs Current
140
Rise and Fall times vs Current
70
td(off)
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
60
50
tr and tf (ns)
tf
40
30
tr
20
td(on)
20
10
0
0
0
10
20 30 40 50
60 70 80
0
10
20
ID, Drain Current (A)
1.6
Eon
1.2
Eoff
0.8
0.4
VDS=400V
ID=50A
TJ=125°C
L=100µH
2
1.5
60
70
80
Eoff
Eon
1
0.5
0
0
10
20 30 40 50 60
ID, Drain Current (A)
70
80
0
ZCS
200
VDS=400V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
hard
switching
100
50
0
5
30
40
50
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current
ZVS
20
Gate Resistance (Ohms)
300
250
10
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
www.microsemi.com
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
October, 2012
0
Frequency (kHz)
50
Switching Energy vs Gate Resistance
2.5
Switching Energy (mJ)
Switching Energy (mJ)
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
40
ID, Drain Current (A)
Switching Energy vs Current
2
30
11 - 13
APTCV60HM45RT3G – Rev 1
td(on) and td(off) (ns)
120
APTCV60HM45RT3G
7. Typical rectifier bridge Performance Curve (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
D = 0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
Trr vs. Current Rate of Charge
175
60
50
TJ=125°C
40
30
20
TJ=25°C
10
0
0.0
0.5
1.0
1.5
2.0
TJ=125°C
VR=400V
150
125
60 A
100
30 A
75
15 A
50
2.5
0
200
TJ=125°C
VR=400V
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
1.5
400
600
800
1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
25
TJ=125°C
VR=400V
20
30 A
60 A
15
15 A
10
5
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
200
150
125
October, 2012
100
75
50
25
0
1
10
100
1000
VR, Reverse Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
12 - 13
APTCV60HM45RT3G – Rev 1
C, Capacitance (pF)
175
APTCV60HM45RT3G
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
13 - 13
APTCV60HM45RT3G – Rev 1
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.