APTGF150A120T3AG

APTGF150A120T3AG Phase leg NPT IGBT Power Module Power Module 29 30 31 32 Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 13 4 3 26 27 28 22 23 25 Features  Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated  Very low stray inductance  Kelvin emitter for easy drive  Internal thermistor for temperature monitoring  High level of integration  AlN substrate for improved thermal performance R1 8 7 16 28 27 26 25 18 19 20 14 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 VCES = 1200V IC = 150A @ Tc = 100°C 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Benefits  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 25°C TJ = 150°C Max ratings 1200 210 150 300 ±20 1041 300A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF150A120T3AG – Rev 1 October, 2012 Absolute maximum ratings APTGF150A120T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 150A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Typ 4.5 3.2 3.9 5.5 Min Typ Max Unit 250 3.7 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=150A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 5.6 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A RG = 5.6 VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C RG = 5.6 VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 9.3 1.4 0.7 nF 1.6 µC 120 50 310 20 ns 130 60 360 ns 30 18 mJ 8 900 A Reverse diode ratings and characteristics VRRM IRM IF VF Test Conditions Min VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 120A VR = 800V di/dt =400A/µs www.microsemi.com V Tj = 25°C Tj = 125°C 150 600 Tj = 125°C 120 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C 350 1120 Tj = 125°C 5780 Tc = 100°C IF = 120A IF = 240A IF = 120A Unit µA A 3 V ns nC 2–6 APTGF150A120T3AG – Rev 1 October, 2012 Symbol Characteristic APTGF150A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.12 0.37 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85    T T  25   See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF150A120T3AG – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGF150A120T3AG Typical Performance Curve Output Characteristics 300 250 250 TJ=25°C 150 VGE=20V VGE=12V VGE=9V 100 TJ=125°C 50 50 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 300 56 VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C 48 250 40 E (mJ) 200 TJ=125°C 150 Eon 32 24 100 Eoff 16 TJ=25°C 50 8 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 350 50 40 300 250 Eon IC (A) VCE = 600V VGE =15V IC = 150A TJ = 125°C 60 E (mJ) VGE=15V 150 100 IC (A) TJ = 125°C 200 200 IC (A) IC (A) Output Characteristics (VGE=15V) 300 30 20 200 150 VGE=15V TJ=125°C RG=5.6 Ω 100 Eoff 50 10 0 0 0 5 0 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.9 IGBT 0.7 0.08 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–6 APTGF150A120T3AG – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.14 APTGF150A120T3AG Forward Characteristic of diode 150 ZVS 120 ZCS 300 VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C 250 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 90 150 TJ=125°C 100 60 30 TJ=25°C 50 hard switching 0 0 0 40 80 120 IC (A) 160 0 200 0.5 1 1.5 2 VF (V) 2.5 3 3.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 Diode 0.9 0.7 0.25 0.2 0.15 0.5 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5–6 APTGF150A120T3AG – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.4 APTGF150A120T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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