APTGF50DDA60T3G
Dual Boost chopper
NPT IGBT Power Module
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
13 14
CR2
CR1
22
7
23
8
Q1
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
VCES = 600V
IC = 50A @ Tc = 80°C
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
65
50
230
±20
250
Tj = 125°C
100A@500V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTGF50DDA60T3G – Rev 3 October, 2012
Symbol
VCES
APTGF50DDA60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 600V
1.7
2.0
2.2
4
Max
250
500
2.45
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 50A
Tj = 125°C
RG = 2.7
Typ
2200
323
200
166
20
100
40
9
pF
nC
ns
120
12
42
10
ns
130
21
0.5
mJ
1
Chopper diode ratings and characteristics
VRRM
IRM
IF
VF
Test Conditions
Min
VR=600V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
IF = 60A
VR = 400V
di/dt =200A/µs
www.microsemi.com
V
Tj = 25°C
Tj = 125°C
Tc = 70°C
IF = 60A
IF = 120A
IF = 60A
Unit
250
500
Tj = 125°C
60
1.6
1.9
1.4
Tj = 25°C
130
Tj = 125°C
Tj = 25°C
170
220
Tj = 125°C
920
µA
A
1.8
V
ns
nC
2-7
APTGF50DDA60T3G – Rev 3 October, 2012
Symbol Characteristic
APTGF50DDA60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT
Min
Typ
50
3952
Max
Unit
k
K
Min
Typ
Max
0.5
0.9
Unit
R25
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T25 T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
4000
-40
-40
-40
2
°C/W
V
150
125
100
3
110
°C
N.m
g
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTGF50DDA60T3G – Rev 3 October, 2012
SP3 Package outline (dimensions in mm)
APTGF50DDA60T3G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
150
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
TJ=25°C
100
TJ=125°C
50
0
250µs Pulse Test
< 0.5% Duty cycle
100
TJ=25°C
50
TJ=125°C
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
125
100
75
50
TJ=125°C
25
TJ=-55°C
TJ=25°C
0
1
2
3
4
5
6
7
8
9
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=100A
5
4
3
Ic=50A
2
1
Ic=25A
0
6
8
10
12
14
14
VCE=300V
12
VCE=480V
10
8
6
4
2
0
0
25
50
75
100 125 150 175 200
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
VCE=120V
IC = 50A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
4
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
150
On state Voltage vs Junction Temperature
4
3.5
Ic=100A
3
2.5
Ic=50A
2
1.5
Ic=25A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
80
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
www.microsemi.com
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
4-7
APTGF50DDA60T3G – Rev 3 October, 2012
Ic, Collector Current (A)
150
APTGF50DDA60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 2.7Ω
30
20
0
25
50
75
100
125
200
175
150
VGE=15V,
TJ=125°C
125
100
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ=125°C
125
150
40
TJ = 125°C
30
20
TJ = 25°C
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
Turn-On Energy Loss vs Collector Current
TJ=125°C,
VGE=15V
VCE = 400V
RG = 2.7Ω
1.5
Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
100
10
10
1
0.5
0
0
25
50
75
100
125
2.5
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7Ω
2
TJ = 125°C
1.5
1
0.5
0
150
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
VCE = 400V
VGE = 15V
TJ= 125°C
2.5
IC, Collector Current (A)
Switching Energy Losses (mJ)
75
VCE = 400V, VGE = 15V, RG = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
VGE=15V,
TJ=25°C
VCE = 400V
RG = 2.7Ω
75
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
80
60
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
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0
200
400
600
VCE, Collector to Emitter Voltage (V)
5-7
APTGF50DDA60T3G – Rev 3 October, 2012
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50DDA60T3G
Capacitance vs Collector to Emitter Voltage
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
240
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
RG = 2.7Ω
TJ = 125°C
TC= 75°C
200
160
120
80
ZCS
ZVS
hard
switching
40
0
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
www.microsemi.com
1
10
6-7
APTGF50DDA60T3G – Rev 3 October, 2012
Thermal Impedance (°C/W)
0.6
APTGF50DDA60T3G
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7-7
APTGF50DDA60T3G – Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
