APTGF50DSK120T3G
Dual Buck chopper
NPT IGBT Power Module
13 14
Q1
Application
AC and DC motor control
Switched Mode Power Supplies
Q2
18
11
19
10
22
7
23
8
CR1
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
CR2
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
VCES = 1200V
IC = 50A @ Tc = 80°C
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single buck of twice the current capability
RoHS compliant
Absolute maximum ratings
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
70
50
150
±20
312
100A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-8
APTGF50DSK120T3G – Rev 1 October, 2012
Symbol
VCES
APTGF50DSK120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
3.2
4.0
4.5
Max
250
500
3.7
Unit
6.5
100
V
nA
Max
Unit
µA
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
VGS = 15V
VBus = 600V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 5
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 50A
Tj = 125°C
RG = 5
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Typ
3450
330
220
330
35
200
35
pF
nC
65
ns
320
30
35
65
ns
360
40
6.9
mJ
3.05
300
A
Chopper diode ratings and characteristics
IRM
IF
VF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 800V
di/dt =200A/µs
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
100
500
Tj = 125°C
60
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
Tj = 25°C
Tj = 125°C
350
560
2890
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Max
Unit
V
µA
A
3
V
ns
nC
2-8
APTGF50DSK120T3G – Rev 1 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGF50DSK120T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
4000
-40
-40
-40
2
Max
0.4
0.9
Unit
°C/W
V
150
125
100
3
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T
T
25
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-8
APTGF50DSK120T3G – Rev 1 October, 2012
SP3 Package outline (dimensions in mm)
APTGF50DSK120T3G
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
120
TJ=25°C
TJ=125°C
80
40
30
TJ=25°C
20
TJ=125°C
10
2
4
6
VCE, Collector to Emitter Voltage (V)
0
8
1
2
3
VCE, Collector to Emitter Voltage (V)
Gate Charge
250µs Pulse Test
< 0.5% Duty cycle
200
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
250
TJ=25°C
150
100
TJ=125°C
50
TJ=25°C
0
0
4
8
12
VGE, Gate to Emitter Voltage (V)
4
18
VCE=240V
IC = 50A
TJ = 25°C
16
14
VCE=600V
12
10
VCE=960V
8
6
4
2
0
0
16
50
100
150
200
250
300
350
Gate Charge (nC)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
70
Ic, DC Collector Current (A)
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
60
50
40
30
20
10
0
25
50
75
100
125
25
TJ, Junction Temperature (°C)
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50
75
100
125
TC, Case Temperature (°C)
150
4-8
APTGF50DSK120T3G – Rev 1 October, 2012
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
0
0
Collector to Emitter Breakdown Voltage
(Normalized)
Output Characteristics (VGE=10V)
40
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
Ic, Collector Current (A)
160
APTGF50DSK120T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
45
VCE = 600V
RG = 5Ω
40
VGE = 15V
35
30
25
0
25
50
75
100
400
VGE=15V,
TJ=125°C
350
300
VGE=15V,
TJ=25°C
250
VCE = 600V
RG = 5Ω
200
125
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
50
75
100
125
Current Fall Time vs Collector Current
50
180
VCE = 600V
RG = 5Ω
140
tf, Fall Time (ns)
tr, Rise Time (ns)
25
ICE, Collector to Emitter Current (A)
100
VGE=15V
60
TJ = 125°C
40
30
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
20
125
VCE = 600V
RG = 5Ω
24
TJ=125°C,
VGE=15V
20
16
12
TJ=25°C,
VGE=15V
8
4
0
25
50
75
100
ICE, Collector to Emitter Current (A)
12
Eon, 50A
10
Eoff, 50A
8
6
Eon, 25A
4
2
6
Eoff, 25A
0
TJ = 125°C
4
TJ = 25°C
2
0
0
Switching Energy Losses (mJ)
14
VCE = 600V
VGE = 15V
RG = 5Ω
25
50
75
100
ICE, Collector to Emitter Current (A)
125
Switching Energy Losses vs Junction Temp.
8
VCE = 600V
VGE = 15V
TJ= 125°C
125
8
125
Switching Energy Losses vs Gate Resistance
18
16
25
50
75
100
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
0
Switching Energy Losses (mJ)
0
VCE = 600V
VGE = 15V
RG = 5Ω
6
Eon, 50A
4
Eoff, 50A
Eon, 25A
2
Eoff, 25A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
25
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50
75
100
TJ, Junction Temperature (°C)
125
5-8
APTGF50DSK120T3G – Rev 1 October, 2012
25
50
75
100
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
0
APTGF50DSK120T3G
IC, Collector Current (A)
Cies
1000
Coes
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
80
60
40
20
0
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
100
Cres
100
0.9
0.35
0.3
0.25
0.7
0.5
0.2
0.3
0.15
0.1
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
100
80
ZVS
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
TC= 75°C
60
ZCS
40
20
Hard
switching
0
10
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20
30
40
50
IC, Collector Current (A)
60
6-8
APTGF50DSK120T3G – Rev 1 October, 2012
Thermal Impedance (°C/W)
Reverse Bias Safe Operating Area
120
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
APTGF50DSK120T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
trr, Reverse Recovery Time (ns)
125
100
TJ=125°C
75
50
TJ=25°C
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
400
TJ=125°C
VR=800V
300
120 A
200
60 A
30 A
100
0
0
3.5
200
TJ=125°C
VR=800V
6
60 A
4
30 A
3
2
1
0
0
200
400 600 800
-diF/dt (A/µs)
1000 1200
800 1000 1200
50
TJ=125°C
VR=800V
40
120 A
60 A
30 A
30
20
10
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
400
Max. Average Forward Current vs. Case Temp.
100
Duty Cycle = 0.5
TJ=175°C
80
300
IF(AV) (A)
C, Capacitance (pF)
120 A
5
600
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
7
400
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
200
100
60
40
20
0
0
1
10
100
VR, Reverse Voltage (V)
1000
25
50
75
100
125
150
175
Case Temperature (ºC)
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7-8
APTGF50DSK120T3G – Rev 1 October, 2012
IF, Forward Current (A)
150
APTGF50DSK120T3G
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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8-8
APTGF50DSK120T3G – Rev 1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
