APTGF90H60T3G
Full - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 90A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
120
90
315
±20
416
Tj = 125°C
200A@500V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-8
APTGF90H60T3G – Rev 2 October, 2012
Symbol
VCES
APTGF90H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Typ
VGE = 0V
VCE = 600V
Zero Gate Voltage Collector Current
VCE(on)
Min
1.7
2.0
2.2
4
Max
250
500
2.45
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC =100A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 1.2
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 1.2
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 100A
Tj = 125°C
RG = 1.2
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Min
Typ
4400
645
401
331
40
200
40
9
120
pF
nC
ns
15
42
10
ns
130
22
1
mJ
2
450
A
Reverse diode ratings and characteristics
VRRM
IRM
Test Conditions
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=600V
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 400V
di/dt =400A/µs
www.microsemi.com
V
Tj = 25°C
Tj = 125°C
Tc = 90°C
Unit
35
600
Tj = 150°C
60
1.8
2.2
1.5
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
160
70
960
µA
A
2.2
V
ns
nC
2-8
APTGF90H60T3G – Rev 2 October, 2012
Symbol Characteristic
APTGF90H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
Min
Typ
Max
0.3
0.65
Unit
T25 = 298.15 K
TC=100°C
RT
R25
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T25 T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
4000
-40
-40
-40
2
°C/W
V
150
125
100
3
110
°C
N.m
g
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-8
APTGF90H60T3G – Rev 2 October, 2012
SP3 Package outline (dimensions in mm)
APTGF90H60T3G
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
200
250µs Pulse Test
< 0.5% Duty cycle
150
TJ=25°C
Ic, Collector Current (A)
TJ=125°C
100
50
0
250µs Pulse Test
< 0.5% Duty cycle
150
TJ=25°C
100
TJ=125°C
50
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
150
100
50
TJ=125°C
TJ=25°C
0
0
1
2
3
4
5
6
7
8
VGE, Gate to Emitter Voltage (V)
VCE=120V
IC = 100A
TJ = 25°C
16
14
VCE=300V
12
VCE=480V
10
8
6
4
2
0
0
9
50
100 150 200 250 300 350 400
Gate Charge (nC)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
140
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
200
4
1.10
1.00
0.90
0.80
25
50
75
100
125
TJ, Junction Temperature (°C)
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4-8
APTGF90H60T3G – Rev 2 October, 2012
Ic, Collector Current (A)
200
APTGF90H60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 1.2Ω
30
20
0
50
100
150
200
250
175
150
VGE=15V,
TJ=125°C
125
100
75
50
300
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 1.2Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ=125°C
250
300
40
TJ = 125°C
30
20
TJ = 25°C
0
0
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
0
300
Turn-On Energy Loss vs Collector Current
TJ=125°C,
VGE=15V
VCE = 400V
RG = 1.2Ω
3
Eoff, Turn-off Energy Loss (mJ)
4
Eon, Turn-On Energy Loss (mJ)
200
10
10
2
1
0
0
50
100
150
200
250
300
50
100
150
200
250
ICE, Collector to Emitter Current (A)
300
Turn-Off Energy Loss vs Collector Current
5
VCE = 400V
VGE = 15V
RG = 1.2Ω
4
TJ = 125°C
3
2
1
0
0
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
6
250
VCE = 400V
VGE = 15V
TJ= 125°C
5
IC, Collector Current (A)
Switching Energy Losses (mJ)
150
VCE = 400V, VGE = 15V, RG = 1.2Ω
50
40
20
100
Current Fall Time vs Collector Current
60
30
50
ICE, Collector to Emitter Current (A)
60
50
VGE=15V,
TJ=25°C
VCE = 400V
RG = 1.2Ω
Eon, 100A
4
3
Eoff, 100A
2
1
200
150
100
50
Eon, 100A
0
0
0
2
4
6
8
10
Gate Resistance (Ohms)
12
www.microsemi.com
0
200
400
600
VCE, Collector to Emitter Voltage (V)
5-8
APTGF90H60T3G – Rev 2 October, 2012
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF90H60T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
10000
C, Capacitance (pF)
Cies
1000
Coes
Cres
100
0
10
20
30
40
240
200
ZVS
160
ZCS
120
80
hard
switching
40
0
0
50
VCE = 400V
D = 50%
RG = 1.2Ω
TJ = 125°C
TC= 75°C
VCE, Collector to Emitter Voltage (V)
40
80
120
160
200
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.15
0.1
0.05
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
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1
10
6-8
APTGF90H60T3G – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.35
APTGF90H60T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.9
0.6
0.5
0.7
0.4
0.5
0.3
0.3
0.2
0.1
0.05
0.1
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
200
160
TJ=125°C
120
80
40
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
TJ=125°C
VR=400V
150
125
120 A
100
60 A
75
30 A
50
3.0
0
400
TJ=125°C
VR=400V
120 A
2
60 A
30 A
1
0
0
400
800
1200 1600 2000 2400
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
3
1200 1600 2000 2400
IRRM vs. Current Rate of Charge
50
TJ=125°C
VR=400V
40
120 A
30
60 A
30 A
20
10
0
0
400
800
-diF/dt (A/µs)
1200 1600 2000 2400
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
100
400
Duty Cycle = 0.5
TJ=175°C
80
300
IF(AV) (A)
C, Capacitance (pF)
800
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
200
100
60
40
20
0
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (°C)
www.microsemi.com
7-8
APTGF90H60T3G – Rev 2 October, 2012
IF, Forward Current (A)
Trr vs. Current Rate of Charge
175
240
APTGF90H60T3G
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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8-8
APTGF90H60T3G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
