APTGL60TL120T3G

APTGL60TL120T3G VCES = 1200V IC = 60A @ Tc = 80°C Three level inverter Trench + Field Stop IGBT4 Application  Solar converter  Uninterruptible Power Supplies Features  Trench + Field Stop IGBT 4 - Low voltage drop - Low leakage current - Low switching losses     Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ Tj = 25°C unless otherwise specified IC ICM VGE PD Parameter Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation TC = 25°C Max ratings 1200 80 60 100 ±20 280 Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-7 APTGL60TL120T3G – Rev 2 Symbol VCES November, 2017 Q1 to Q4 Absolute maximum ratings (per IGBT) APTGL60TL120T3G Q1 to Q4 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 5.0 1.8 2.2 5.8 Max Unit 1 2.2 mA 6.5 400 V nA Max Unit V Q1 to Q4 Dynamic Characteristics (per IGBT) Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 TJ = 25°C VGE = ±15V TJ = 150°C VCE = 600V IC = 50A TJ = 25°C RG = 8.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 2770 205 160 pF 0.38 µC 50 27 270 70 ns 50 30 ns 290 80 3.8 5.5 2.5 4.5 mJ 200 A mJ 0.53 °C/W November, 2017 Tr Td(off) Tf Test Conditions www.microsemi.com 2-7 APTGL60TL120T3G – Rev 2 Symbol Characteristic APTGL60TL120T3G CR1 to CR6 diode ratings and characteristics (per diode) Symbol VRRM IRM IF VF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions Min Typ Max 1200 100 VR=600V Tc = 80°C IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 Unit V µA A 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature   1 1  RT: Thermistor value at T   exp B25 / 85   T25 T   Thermal and package characteristics Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g November, 2017 Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight www.microsemi.com 3-7 APTGL60TL120T3G – Rev 2 Symbol VISOL TJ TJOP TSTG TC Torque Wt APTGL60TL120T3G Package outline (dimensions in mm) See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve VCE=600V D=50% R G=8.2 Ω T J=150°C Tc=75°C 50 40 30 20 November, 2017 Hard switching 10 0 10 20 30 40 50 60 70 80 90 IC (A) www.microsemi.com 4-7 APTGL60TL120T3G – Rev 2 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 APTGL60TL120T3G Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 VGE=15V 40 20 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 8 6 VCE = 600V VGE =15V IC = 50A TJ = 150°C 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 2 0 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 November, 2017 0.5 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-7 APTGL60TL120T3G – Rev 2 Thermal Impedance (°C/W) 0.6 APTGL60TL120T3G CR1 to CR6 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current 2.5 VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 November, 2017 0.4 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-7 APTGL60TL120T3G – Rev 2 Thermal Impedance (°C/W) 1.4 APTGL60TL120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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