APTGT100A120T3AG

APTGT100A120T3AG VCES = 1200V IC = 100A @ Tc = 100°C Phase leg Trench + Field Stop IGBT3 Power Module 29 30 31 32 Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 13 4 3 26 27 28 22 23 25 Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Very low stray inductance  Kelvin emitter for easy drive  Internal thermistor for temperature monitoring  AlN substrate for improved thermal performance R1 8 7 16 18 19 20 14 Benefits  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together All ratings @ Tj = 25°C unless otherwise specified IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage Pulsed Collector Current Gate – Emitter Voltage Power Dissipation TC = 25°C Max ratings 1200 140 100 200 ±20 595 Reverse Bias Safe Operating Area Tj = 125°C 200A @ 1100V Continuous Collector Current TC = 25°C TC = 100°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–6 APTGT100A120T3AG – Rev 2 Symbol VCES November, 2017 Absolute maximum ratings (Per IGBT) APTGT100A120T3AG Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE= ±15V ; VCE=600V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9 VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 3.9 VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Typ 7200 400 300 pF 0.9 µC 260 30 420 ns 70 290 50 520 ns 90 10 mJ 10 400 Junction to Case Thermal Resistance A 0.21 °C/W Max 1200 350 Unit V µA A Reverse diode ratings and characteristics (Per diode) VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy RthJC Test Conditions Min Typ VR=1200V IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =2300A/µs Junction to Case Thermal Resistance Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C 280 11 Tj = 125°C Tj = 25°C Tj = 125°C 20 4.4 8.2 2.1 ns µC mJ 0.32 www.microsemi.com V November, 2017 Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current °C/W 2–6 APTGT100A120T3AG – Rev 2 Symbol VRRM IRM IF APTGT100A120T3AG Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85    T T  25   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT100A120T3AG – Rev 2 November, 2017 Package outline (dimensions in mm) APTGT100A120T3AG Typical Performance Curve Output Characteristics (VGE=15V) 200 TJ=125°C VGE=17V 150 IC (A) IC (A) TJ = 125°C TJ=25°C 150 Output Characteristics 200 100 VGE=13V VGE=15V 100 VGE=9V 50 50 0 0 0 1 2 VCE (V) 4 0 Transfert Characteristics 200 175 E (mJ) 125 100 75 50 TJ=125°C 2 VCE (V) 3 VCE = 600V VGE = 15V RG = 3.9 Ω TJ = 125°C 20 TJ=125°C 1 4 Energy losses vs Collector Current 25 TJ=25°C 150 IC (A) 3 15 Eon Eoff Er 10 Eon 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance Eon 200 160 IC (A) E (mJ) 240 VCE = 600V VGE =15V IC = 100A TJ = 125°C 15 100 125 150 175 200 Reverse Bias Safe Operating Area 25 20 75 IC (A) VGE (V) Eoff 10 Er 120 80 5 VGE=15V TJ=125°C RG=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 IGBT November, 2017 0.2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–6 APTGT100A120T3AG – Rev 2 Thermal Impedance (°C/W) 0.24 APTGT100A120T3AG Forward Characteristic of diode 200 VCE=600V D=50% RG=3.9 Ω TJ=125°C Tc=75°C ZVS 80 60 TJ=25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 40 20 TJ=125°C 100 50 Hard switching TJ=125°C 0 0 0 25 50 75 100 0 125 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 Diode 0.5 0.15 0.05 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) November, 2017 0.1 www.microsemi.com 5–6 APTGT100A120T3AG – Rev 2 Thermal Impedance (°C/W) 0.35 APTGT100A120T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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