APTGT100TL60T3G

APTGT100TL60T3G Three level inverter Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 100A @ Tc = 80°C Application  Solar converter  Uninterruptible Power Supplies Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  High level of integration  Internal thermistor for temperature monitoring Benefits  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per IGBT) ICM VGE PD RBSOA TC = 25°C Max ratings 600 150 100 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area Unit V November, 2017 IC Parameter Collector - Emitter Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-8 APTGT100TL60T3G – Rev 2 Symbol VCES APTGT100TL60T3G Q1 to Q4 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Q1 to Q4 Dynamic Characteristics (per IGBT) Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 VGE = ±15V VBus = 300V IC = 100A RG = 3.3 Typ 6100 390 190 pF 1.1 µC 115 45 225 ns 55 130 50 ns 300 70 Tj = 150°C 0.875 mJ Tj = 150°C 3.5 mJ 500 A VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 0.44 °C/W CR1 to CR4 diode ratings and characteristics (per diode) Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward current VR=600V VF Diode Forward Voltage IF = 75A VGE = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC IF = 75A VR = 300V di/dt =2000A/µs Junction to Case Thermal Resistance Min Typ Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 75 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 3.6 Tj = 150°C Tj = 25°C Tj = 150°C 7.6 0.85 1.8 Max Unit 600 150 V µA A 2 V ns µC mJ 0.98 www.microsemi.com November, 2017 VRRM IRM IF Test Conditions °C/W 2-8 APTGT100TL60T3G – Rev 2 Symbol Characteristic APTGT100TL60T3G CR5 & CR6 diode ratings and characteristics (per diode) Symbol VRRM IRM IF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions RthJC Typ VR=600V IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Err Min Reverse Recovery Energy Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C 9.9 1.1 Tj = 150°C 2.4 Max 600 150 2 Unit V µA A V ns µC mJ Junction to Case Thermal Resistance 0.77 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85    T T   25  Thermal and package characteristics Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g November, 2017 Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight www.microsemi.com 3-8 APTGT100TL60T3G – Rev 2 Symbol VISOL TJ TJOP TSTG TC Torque Wt APTGT100TL60T3G Package outline (dimensions in mm) See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=3.3Ω T J=150°C 60 40 T c =85°C Hard switching 20 0 25 50 75 100 125 150 IC (A) www.microsemi.com November, 2017 0 4-8 APTGT100TL60T3G – Rev 2 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT100TL60T3G Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 75 50 25 25 TJ=25°C 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 TJ=150°C TJ=25°C 4 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=15V 100 50 0 VGE=13V 125 75 0 VGE=19V TJ = 150°C 175 4 150 100 2 VGE=15V TJ=150°C RG=3.3Ω 50 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.7 November, 2017 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-8 APTGT100TL60T3G – Rev 2 Thermal Impedance (°C/W) 0.5 APTGT100TL60T3G CR1 to CR4 Typical performance curve Forward Characteristic of diode 150 125 IF (A) 100 75 50 TJ=150°C 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 2 3 VCE = 300V IC = 75A TJ = 150°C 2 E (mJ) E (mJ) 1.5 VCE = 300V RG = 4.7Ω TJ = 150°C 1 1 0.5 0 0 5 10 15 20 25 30 0 35 0 25 50 75 100 125 150 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 November, 2017 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-8 APTGT100TL60T3G – Rev 2 Thermal Impedance (°C/W) 1.2 APTGT100TL60T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 200 175 150 IF (A) 125 100 75 TJ=150°C 50 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Energy losses vs Collector Current Switching Energy Losses vs Gate Resistance 4 3 VCE = 300V IC = 100A TJ = 150°C 2.5 3 E (mJ) E (mJ) 2 VCE = 300V RG = 3.3Ω TJ = 150°C 1.5 1 2 1 0.5 0 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 IF (A) Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 November, 2017 0.7 10 Rectangular Pulse Duration in Seconds www.microsemi.com 7-8 APTGT100TL60T3G – Rev 2 Thermal Impedance (°C/W) 0.8 APTGT100TL60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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