APTGT150A120T3AG

APTGT150A120T3AG VCES = 1200V IC = 150A @ Tc = 100°C Phase leg Trench + Field Stop IGBT3 Power Module 29 30 31 32 13 Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 4 3 26 27 28 22 23 25 Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Very low stray inductance  Kelvin emitter for easy drive  Internal thermistor for temperature monitoring  AlN substrate for improved thermal performance R1 8 7 16 18 19 20 14 Benefits  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Absolute maximum ratings (Per IGBT) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C TC = 100°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C Max ratings 1200 220 150 300 ±20 833 Unit V A V W 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–6 APTGT150A120T3AG – Rev 2 November, 2017 All ratings @ Tj = 25°C unless otherwise specified APTGT150A120T3AG Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE= ±15V ; VCE=600V IC=150A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 2.2 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A RG = 2.2 VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C RG = 2.2 VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Typ 10.7 0.56 0.48 nF 1.4 µC 280 40 420 ns 75 290 45 520 ns 90 14 mJ 16 600 Junction to Case Thermal Resistance A 0.15 °C/W Max 1200 350 Unit V µA A Reverse diode ratings and characteristics (Per diode) Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions RthJC Typ VR=1200V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 150 1.6 1.6 170 280 14 Tj = 125°C Tj = 25°C Tj = 125°C 28 6 11 Tc = 80°C IF = 150A VGE = 0V IF = 150A VR = 600V di/dt =2500A/µs Er Min Reverse Recovery Energy Junction to Case Thermal Resistance 2.1 ns µC mJ 0.25 www.microsemi.com V °C/W 2–6 APTGT150A120T3AG – Rev 2 November, 2017 Symbol VRRM IRM IF APTGT150A120T3AG Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85    T T  25   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT150A120T3AG – Rev 2 November, 2017 Package outline (dimensions in mm) APTGT150A120T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 300 TJ = 125°C 250 TJ=25°C 200 150 VGE=15V 150 100 100 50 50 VGE=9V 0 0 1 2 3 4 0 1 VCE (V) 30 TJ=25°C 250 200 2 VCE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 300 VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 125°C 25 20 TJ=125°C E (mJ) IC (A) VGE=13V 200 0 150 Eoff Eon 15 Er 10 100 TJ=125°C 50 5 0 0 5 6 7 8 9 10 11 0 12 50 Switching Energy Losses vs Gate Resistance Eon 250 300 250 20 IC (A) 25 200 350 VCE = 600V VGE =15V IC = 150A TJ = 125°C 30 150 Reverse Bias Safe Operating Area 40 35 100 IC (A) VGE (V) E (mJ) VGE=17V TJ=125°C IC (A) IC (A) 250 Eoff 15 Er 10 200 150 VGE=15V TJ=125°C RG=2.2 Ω 100 50 5 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.12 0.08 IGBT 0.7 0.5 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–6 APTGT150A120T3AG – Rev 2 November, 2017 Thermal Impedance (°C/W) 0.16 APTGT150A120T3AG VCE=600V D=50% RG=2.2 Ω TJ=125°C TC=75°C 80 ZVS 60 40 20 0 Forward Characteristic of diode 300 250 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 100 40 TJ=125°C 50 Hard Switching 10 TJ=125°C 150 TJ=25°C 0 70 0 100 130 160 190 220 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Diode 0.9 0.2 0.7 0.5 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5–6 APTGT150A120T3AG – Rev 2 November, 2017 Thermal Impedance (°C/W) 0.3 APTGT150A120T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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