APTGT150A60T3AG
VCES = 600V
IC = 150A @ Tc = 100°C
Phase leg
Trench + Field Stop IGBT3
Power Module
29
30
31
32
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
13
4
3
26
27
28
22
23
25
Features
Trench + Field Stop IGBT3
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
AlN substrate for improved thermal performance
R1
8
7
16
18
19
20
14
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
All ratings @ Tj = 25°C unless otherwise specified
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Voltage
TC = 25°C
TC = 100°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 150°C
Max ratings
600
225
150
300
±20
600
Unit
V
A
V
W
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1–6
APTGT150A60T3AG – Rev 2 November, 2017
Absolute maximum ratings (Per IGBT)
APTGT150A60T3AG
Electrical Characteristics (Per IGBT)
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 150A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics (Per IGBT)
Symbol
Cies
Coes
Cres
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
RthJC
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGE= ±15V ; VCE=300V
IC=150A
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 150A
RG = 3.3
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 150A
RG = 3.3
Typ
9200
580
270
pF
1.6
µC
115
45
225
ns
55
130
50
ns
300
70
0.85
1.5
4.1
5.3
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
VGE = ±15V
VBus = 300V
IC = 150A
RG = 3.3
mJ
mJ
750
Junction to Case Thermal Resistance
A
0.25
°C/W
Max
600
150
Unit
V
µA
A
Symbol
VRRM
IRM
IF
Characteristic
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
RthJC
Test Conditions
Min
Typ
VR = 600V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
150
1.6
1.5
100
150
7.2
Tj = 150°C
Tj = 25°C
Tj = 150°C
15.2
1.7
3.6
Tc = 100°C
IF = 150A
VGE = 0V
IF = 150A
VR = 300V
di/dt =2800A/µs
Junction to Case Thermal Resistance
2
ns
µC
mJ
0.42
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V
°C/W
2–6
APTGT150A60T3AG – Rev 2 November, 2017
Reverse diode ratings and characteristics (Per diode)
APTGT150A60T3AG
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
175
TJmax -25
125
125
3
110
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T
T
25
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3–6
APTGT150A60T3AG – Rev 2 November, 2017
Package outline (dimensions in mm)
APTGT150A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
TJ=25°C
TJ = 150°C
VGE=19V
250
250
150
VGE=15V
150
100
100
50
50
VGE=9V
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
10
TJ=25°C
250
E (mJ)
150
TJ=125°C
TJ=25°C
6
7
Er
4
8
9
0
10
11
0
12
50
100
200
250
300
Reverse Bias Safe Operating Area
Eon
300
Eoff
Eoff
250
IF (A)
E (mJ)
150
IC (A)
350
VCE = 300V
VGE =15V
IC = 150A
TJ = 150°C
8
3.5
6
Switching Energy Losses vs Gate Resistance
10
3
Eoff
VGE (V)
12
2.5
2
0
5
1.5
2
VCE (V)
Eon
TJ=150°C
50
1
VCE = 300V
VGE = 15V
RG = 3.3Ω
TJ = 150°C
8
200
100
0.5
Energy losses vs Collector Current
Transfert Characteristics
300
IC (A)
VGE=13V
200
TJ=150°C
IC (A)
IC (A)
TJ=125°C
200
6
4
150
100
Er
2
200
VGE=15V
TJ=150°C
RG=3.3Ω
50
Eon
0
0
0
5
10
15
20
Gate Resistance (ohms)
25
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4–6
APTGT150A60T3AG – Rev 2 November, 2017
Thermal Impedance (°C/W)
0.3
APTGT150A60T3AG
Forward Characteristic of diode
300
VCE=300V
D=50%
RG=3.3Ω
TJ=150°C
ZVS
100
ZCS
80
250
200
Tc=85°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
40
TJ=125°C
100
Hard
switching
20
150
TJ=150°C
50
TJ=25°C
0
0
0
50
100
150
200
0
250
0.4
IC (A)
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.4
0.3
0.2
0.9
0.7
0.5
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5–6
APTGT150A60T3AG – Rev 2 November, 2017
Thermal Impedance (°C/W)
0.5
APTGT150A60T3AG
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disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTGT150A60T3AG – Rev 2 November, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.