APTGT25X120T3G
VCES = 1200V
IC = 25A @ Tc = 80°C
3 Phase bridge
Trench + Field Stop IGBT3
Power Module
15
19
20
23
29
25
30
18
11
10
Application
Motor control
31
16
22
8
4
7
3
12
14
28
R1
13
2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
Features
Trench + Field Stop IGBT3
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (Per IGBT)
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Voltage
TC = 25°C
Max ratings
1200
40
25
50
±20
156
Tj = 125°C
50A @ 1150V
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
Reverse Bias Safe Operation Area
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1-6
APTGT25X120T3G – Rev 2 November, 2017
Symbol
VCES
APTGT25X120T3G
Electrical Characteristics (Per IGBT)
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.7
2.0
5.8
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics (Per IGBT)
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 25A
Tj = 125°C
RG = 27
Min
Typ
1800
82
90
30
420
pF
ns
70
90
50
520
ns
90
2.5
mJ
2.9
0.8
°C/W
Max
Unit
1200
100
V
µA
Reverse diode ratings and characteristics (Per diode)
VRRM
IRM
IF
VF
Peak Repetitive Reverse Voltage
Reverse Leakage Current
Test Conditions
Tc = 80°C
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
IF = 30A
VR = 800V
Qrr
Reverse Recovery Charge
di/dt =200A/µs
RthJC
Typ
VR=1200V
DC Forward Current
Diode Forward Voltage
Min
Junction to Case Thermal Resistance
Tj = 125°C
Tj = 25°C
30
2.6
3.2
1.8
300
Tj = 125°C
380
Tj = 25°C
Tj = 125°C
360
1700
A
3.1
V
ns
nC
1.2
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°C/W
2-6
APTGT25X120T3G – Rev 2 November, 2017
Symbol Characteristic
APTGT25X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T25 T
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
150
TJmax -25
125
125
3
110
Unit
V
°C
N.m
g
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGT25X120T3G – Rev 2 November, 2017
Package outline (dimensions in mm)
APTGT25X120T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
50
Output Characteristics
50
TJ = 125°C
TJ=25°C
VGE=17V
30
IC (A)
IC (A)
TJ=125°C
20
10
10
VGE=9V
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
0
3.5
6
TJ=25°C
E (mJ)
4
30
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 27Ω
TJ = 125°C
5
40
1
3
4
Energy losses vs Collector Current
Transfert Characteristics
50
IC (A)
VGE=15V
30
20
0
TJ=125°C
20
Eon
Eoff
Eon
3
2
10
1
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
10
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE =15V
IC = 25A
TJ = 125°C
7
6
5
40
50
Reverse Bias Safe Operating Area
Eon
50
40
4
Eoff
3
30
20
Eon
2
30
60
IC (A)
8
20
IC (A)
VGE (V)
E (mJ)
VGE=13V
40
40
VGE=15V
TJ=125°C
RG=27Ω
10
1
0
0
0
40
80
120
160
Gate Resistance (ohms)
200
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
IGBT
0.9
0.7
0.6
0.5
0.4
0.3
0.7
0.5
0.3
0.2
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGT25X120T3G – Rev 2 November, 2017
Thermal Impedance (°C/W)
0.9
APTGT25X120T3G
Forward Characteristic of diode
80
70
VCE=600V
D=50%
RG=27Ω
TJ=125°C
TC=75°C
30
20
60
40
TJ=25°C
30
hard
switching
10
TJ=125°C
50
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
40
20
10
0
0
0
10
20
30
40
0
50
1
IC (A)
2
VF (V)
3
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
Diode
0.7
0.8
0.6
0.4
0.2
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGT25X120T3G – Rev 2 November, 2017
Thermal Impedance (°C/W)
1.4
APTGT25X120T3G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6-6
APTGT25X120T3G – Rev 2 November, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
