APTGT30H170T3G

APTGT30H170T3G Full - Bridge Trench + Field Stop IGBT3 Power Module VCES = 1700V IC = 30A @ Tc = 80°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 45 30 70 ±20 210 Tj = 125°C 60A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGT30H170T3G – Rev 3 November, 2017 Absolute maximum ratings (Per IGBT) APTGT30H170T3G Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 30A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 5.2 2.0 2.4 5.8 Max Unit 250 2.4 µA 6.4 600 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf Eon Eoff Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 30A RG = 18 Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 30A RG = 18 Min Typ 2500 90 100 70 pF ns 650 80 100 70 750 100 17 15 ns mJ 0.6 °C/W Max 1700 250 Unit V µA A Reverse diode ratings and characteristics (Per diode) Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy RthJC Test Conditions Min Typ VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =800A/µs Junction to Case Thermal Resistance TC=50°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.8 1.9 385 490 14 Tj = 125°C Tj = 25°C Tj = 125°C 23 6 12 2.2 ns µC mJ 0.7 www.microsemi.com V °C/W 2-6 APTGT30H170T3G – Rev 3 November, 2017 Symbol VRRM IRM IF APTGT30H170T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T   exp  B25 / 85   T25 T   Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT30H170T3G – Rev 3 November, 2017 Package outline (dimensions in mm) APTGT30H170T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 60 60 TJ = 125°C 50 TJ=25°C VGE=19V 40 40 IC (A) TJ=125°C 30 VGE=15V 30 20 20 10 10 0 VGE=13V VGE=9V 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 VCE = 900V VGE = 15V RG = 18 Ω TJ = 125°C 35 TJ=25°C 30 30 E (mJ) IC (A) 40 TJ=125°C 20 4 5 25 Eon Eoff 20 15 Er 10 10 TJ=125°C 5 0 0 5 6 7 8 9 10 0 11 20 Switching Energy Losses vs Gate Resistance 60 80 100 Reverse Bias Safe Operating Area 80 70 VCE = 900V VGE =15V IC = 30A TJ = 125°C 60 Eon 50 IC (A) 60 40 IC (A) VGE (V) E (mJ) 3 VCE (V) 40 50 40 Eoff 40 30 VGE=15V TJ=125°C RG=18 Ω 20 20 Er 10 0 0 0 20 40 60 80 100 Gate Resistance (ohms) 0.6 0.5 0 120 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (°C/W) 2 Energy losses vs Collector Current Transfert Characteristics 60 1 IGBT 0.9 0.7 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT30H170T3G – Rev 3 November, 2017 IC (A) 50 APTGT30H170T3G Forward Characteristic of diode 100 VCE=900V D=50% RG=18 Ω TJ=125°C TC=75°C ZVS 40 35 30 25 20 ZCS 15 hard switching 10 TJ=25°C 80 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 45 60 TJ=125°C 40 20 TJ=125°C 5 0 0 0 10 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 Diode Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT30H170T3G – Rev 3 November, 2017 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 APTGT30H170T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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