APTGT50H60RT3G
Full bridge + rectifier bridge
Trench + Field Stop IGBT3
Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
Application
Solar converter
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals both for power and signal
for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
All multiple inputs and outputs must be shorted together
7/24 ; 5/26
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-8
APTGT50H60RT3G – Rev 2 October, 2012
All ratings @ Tj = 25°C unless otherwise specified
APTGT50H60RT3G
1. Full bridge
Absolute maximum ratings (per IGBT)
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
A
V
W
Electrical Characteristics (per IGBT)
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics (per IGBT)
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=50A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
VGE = ±15V
Tj = 25°C
VBus = 300V
Tj = 150°C
IC = 50A
Tj = 25°C
RG = 8.2
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal Resistance
3150
200
95
pF
0.5
µC
110
45
200
ns
40
120
50
250
ns
60
0.3
0.43
1.35
1.75
mJ
mJ
250
A
0.85
www.microsemi.com
°C/W
2-8
APTGT50H60RT3G – Rev 2 October, 2012
Symbol Characteristic
APTGT50H60RT3G
Reverse diode ratings and characteristics (per diode)
Symbol Characteristic
VRRM
IRM
IF
Maximum Reverse Leakage Current
Min
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
Typ
Max
600
VR=600V
IF = 50A
VGE = 0V
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
50
1.6
1.5
100
Tj = 150°C
Tj = 25°C
150
2.6
Tj = 150°C
Tj = 25°C
Tj = 150°C
5.4
0.6
1.2
IF = 50A
VR = 300V
di/dt =1800A/µs
Unit
V
Tj = 25°C
Tj = 150°C
DC Forward Current
VF
RthJC
Test Conditions
Maximum Peak Repetitive Reverse Voltage
250
500
Junction to Case Thermal Resistance
µA
A
2
V
ns
µC
mJ
1.42
°C/W
2. Rectifier bridge
Absolute maximum ratings (per diode)
Symbol
VR
VRRM
IF(AV)
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Duty cycle = 50%
Maximum Average Forward Current
Non-Repetitive Forward Surge Current
8.3ms
Max ratings
Unit
600
V
40
320
A
TC = 80°C
TJ = 45°C
Electrical Characteristics (per diode)
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
Test Conditions
IF = 30A
IF = 60A
Tj = 125°C
IF = 30A
Tj = 25°C
VR = 600V
Tj = 125°C
www.microsemi.com
Min
Typ
1.8
2.2
1.5
Max
2.2
Unit
V
250
500
µA
3-8
APTGT50H60RT3G – Rev 2 October, 2012
Symbol Characteristic
APTGT50H60RT3G
Dynamic Characteristics (per diode)
Symbol Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF=1A,VR=30V
di/dt = 100A/µs
IF = 30A
VR = 400V
di/dt = 200A/µs
IRRM
Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
RthJC
Junction to Case Thermal Resistance
IF = 30A
VR = 400V
Min
Tj = 25°C
Typ
Max
22
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
Tj = 125°C
35
480
Tj = 25°C
3
Tj = 125°C
6
Tj = 125°C
di/dt = 1000A/µs
Unit
ns
ns
nC
A
85
ns
920
µC
20
A
1.2
°C/W
3. Thermal and package characteristics
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
Min
4000
-40
-40
-40
2
Typ
Max
Unit
V
T25 = 298.15 K
TC=100°C
RT
R 25
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B 25 / 85
T25 T
Package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
175
125
100
3
110
°C
N.m
g
4-8
APTGT50H60RT3G – Rev 2 October, 2012
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTGT50H60RT3G
SP3 Package outline (dimensions in mm)
4. Typical full bridge Performance Curve (per IGBT and parallel diode)
Forward Characteristic of diode
100
ZCS
100
80
VCE=300V
D=50%
RG=8.2Ω
TJ=150°C
80
Tc=85°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
ZVS
40
Hard
switching
60
TJ=125°C
40
TJ=150°C
20
20
TJ=25°C
0
0
0
20
40
IC (A)
60
0
80
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.7
0.8
0.5
0.6
0.3
0.4
0.2
Diode
D = 0.9
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-8
APTGT50H60RT3G – Rev 2 October, 2012
Thermal Impedance (°C/W)
1.6
APTGT50H60RT3G
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE=9V
0
2
2.5
0
3
3.5
60
E (mJ)
IC (A)
2.5
40
1
1.5
2
VCE (V)
2.5
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
3
TJ=25°C
80
0.5
3
3.5
Energy losses vs Collector Current
Transfert Characteristics
100
VGE=19V
80
IC (A)
IC (A)
80
TJ=125°C
Eoff
2
Err
1.5
1
TJ=150°C
20
TJ=25°C
0
0
5
6
7
Eon
0.5
8
9
10
11
0
12
20
40
Switching Energy Losses vs Gate Resistance
3
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
2.5
80
100
Reverse Bias Safe Operating Area
125
Eoff
100
Eon
IC (A)
E (mJ)
2
60
IC (A)
VGE (V)
1.5
75
50
1
Err
0.5
VGE=15V
TJ=150°C
RG=8.2Ω
25
Eon
0
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.6
IGBT
D = 0.9
0.7
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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6-8
APTGT50H60RT3G – Rev 2 October, 2012
Thermal Impedance (°C/W)
1
APTGT50H60RT3G
5. Typical rectifier bridge Performance Curve (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
D = 0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
Trr vs. Current Rate of Charge
175
60
50
TJ=125°C
40
30
20
TJ=25°C
10
0
0.0
0.5
1.0
1.5
2.0
TJ=125°C
VR=400V
150
125
60 A
100
30 A
75
15 A
50
2.5
0
200
TJ=125°C
VR=400V
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
1.5
400
600
800
1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
25
TJ=125°C
VR=400V
20
30 A
60 A
15
15 A
10
5
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
200
150
125
100
75
50
25
0
1
10
100
1000
VR, Reverse Voltage (V)
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7-8
APTGT50H60RT3G – Rev 2 October, 2012
C, Capacitance (pF)
175
APTGT50H60RT3G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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8-8
APTGT50H60RT3G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
