APTGT50H60T3G

APTGT50H60T3G Full - Bridge Trench + Field Stop IGT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Stable temperature behavior  Very rugged  Solderable terminals for easy PCB mounting  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGT50H60T3G – Rev 3, November,2017 Absolute maximum ratings (per IGBT) APTGT50H60T3G Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics (per IGBT) Symbol Characteristic Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 150°C RG = 8.2 110 45 200 Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance pF ns 40 120 50 250 ns 60 0.43 mJ 1.75 mJ 0.85 °C/W Reverse diode ratings and characteristics (per diode) VRRM IRM Test Conditions Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs RthJC Typ Peak Repetitive Reverse Voltage IF Er Min Reverse Recovery Energy Junction to Case Thermal Resistance Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.6 1.2 Max Unit 600 V 250 µA A 2 ns µC mJ 1.42 www.microsemi.com V °C/W 2-6 APTGT50H60T3G – Rev 3, November,2017 Symbol Characteristic APTGT50H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T   exp  B25 / 85   T25 T   Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT50H60T3G – Rev 3, November,2017 Package outline (dimensions in mm) APTGT50H60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ=125°C 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V VGE=13V TJ=150°C 60 IC (A) IC (A) 80 TJ = 150°C 80 TJ=125°C Eoff 2 Er 1.5 1 TJ=150°C 20 0 0 5 6 7 Eon 0.5 TJ=25°C 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 3 VCE = 300V VGE =15V IC = 50A TJ = 150°C 2.5 80 100 Reverse Bias Safe Operating Area 125 Eoff 100 Eon IC (A) E (mJ) 2 60 IC (A) VGE (V) 1.5 75 50 1 Er 0.5 VGE=15V TJ=150°C RG=8.2Ω 25 Eon 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 IGBT 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT50H60T3G – Rev 3, November,2017 Thermal Impedance (°C/W) 1 APTGT50H60T3G Forward Characteristic of diode 100 VCE=300V D=50% RG=8.2Ω TJ=150°C 100 ZVS 80 ZCS 60 80 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 40 60 TJ=125°C 40 TJ=150°C 20 Hard switching 20 TJ=25°C 0 0 0 20 40 IC (A) 60 0 80 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT50H60T3G – Rev 3, November,2017 Thermal Impedance (°C/W) 1.6 APTGT50H60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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