APTGT75TL60T3G

APTGT75TL60T3G Three level inverter Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 75A @ Tc = 80°C Application  Solar converter  Uninterruptible Power Supplies Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  High level of integration  Internal thermistor for temperature monitoring Benefits  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ Tj = 25°C unless otherwise specified Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-8 APTGT75TL60T3G – Rev 2 November, 2017 Q1 to Q4 Absolute maximum ratings (per IGBT) APTGT75TL60T3G Q1 to Q4 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q1 to Q4 Dynamic Characteristics (per IGBT) Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7 VGE = ±15V Tj = 150°C VBus = 300V IC = 75A Tj = 150°C RG = 4.7 VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 4620 300 140 pF 0.8 µC 110 45 200 ns 40 120 50 250 60 ns 0.6 mJ 2.6 mJ 380 A 0.60 www.microsemi.com °C/W 2-8 APTGT75TL60T3G – Rev 2 November, 2017 Symbol Characteristic APTGT75TL60T3G CR1 to CR4 diode ratings and characteristics (per diode) Symbol VRRM IRM IF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions RthJC Typ VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs Err Min Reverse Recovery Energy Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.20 Junction to Case Thermal Resistance Max 600 150 2 Unit V µA A V ns µC mJ 1.42 °C/W Max Unit 600 250 V µA CR5 & CR6 diode ratings and characteristics (per diode) Symbol Characteristic VRRM IRM Test Conditions Peak Repetitive Reverse Voltage Reverse Leakage Current IF DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Min Typ VR=600V IF = 75A VGE = 0V IF = 75A VR = 300V di/dt =2000A/µs Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 75 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 3.6 Tj = 150°C Tj = 25°C Tj = 150°C 7.6 0.85 1.8 Junction to Case Thermal Resistance A 2 V ns µC mJ 0.98 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T   exp B25 / 85  T T   25  www.microsemi.com 3-8 APTGT75TL60T3G – Rev 2 November, 2017 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTGT75TL60T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g Package outline (dimensions in mm) See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com Operating Frequency vs Collector Current 75 60 VCE=300V D=50% R G=4.7Ω T J=150°C 45 T c =85°C 30 Hard switching 15 0 0 20 40 60 80 100 IC (A) www.microsemi.com 4-8 APTGT75TL60T3G – Rev 2 November, 2017 Fmax, Operating Frequency (kHz) Q1 to Q4 Typical performance curve APTGT75TL60T3G Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25°C TJ = 150°C VGE=13V 100 TJ=150°C IC (A) IC (A) 100 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25°C 125 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 4.7Ω TJ = 150°C 4 E (mJ) 100 75 TJ=150°C 50 0.5 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=19V 125 125 3 Eoff 2 Eon 1 25 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 5 175 Eoff 150 125 Eon 3 IC (A) E (mJ) 4 2 VCE = 300V VGE =15V IC = 75A TJ = 150°C 1 100 75 50 VGE=15V TJ=150°C RG=4.7Ω 25 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-8 APTGT75TL60T3G – Rev 2 November, 2017 Thermal Impedance (°C/W) 0.7 APTGT75TL60T3G CR1 to CR4 Typical performance curve Forward Characteristic of diode 100 IF (A) 80 60 40 TJ=150°C 20 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.5 1.2 1 0.8 E (mJ) E (mJ) 1 0.6 VCE = 300V VGE =15V IC = 50A TJ = 150°C 0.4 0.2 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0.5 0 0 5 15 25 35 45 55 0 65 20 40 60 80 100 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-8 APTGT75TL60T3G – Rev 2 November, 2017 Thermal Impedance (°C/W) 1.6 APTGT75TL60T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 150 125 IF (A) 100 75 50 TJ=150°C 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 2 3 VCE = 300V IC = 75A TJ = 150°C 2 E (mJ) E (mJ) 1.5 VCE = 300V RG = 4.7Ω TJ = 150°C 1 1 0.5 0 0 5 10 15 20 25 30 0 35 0 25 50 75 100 125 150 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 7-8 APTGT75TL60T3G – Rev 2 November, 2017 Thermal Impedance (°C/W) 1.2 APTGT75TL60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8-8 APTGT75TL60T3G – Rev 2 November, 2017 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.