APTGT75X60T3G

APTGT75X60T3G 3 Phase bridge Trench + Field Stop IGBT3 Power Module 15 31 16 19 20 23 29 25 30 18 11 10 VCES = 600V IC = 75A* @ Tc = 80°C 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. Application  Motor control Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (Per IGBT) IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 100* 75* 150 ±20 250 150A @ 550V Unit V A V W * Specification of IGBT device but output current must be limited due to size of output pin. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGT75X60T3G – Rev 2 November, 2017 Symbol VCES APTGT75X60T3G Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Characteristic Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 4620 300 140 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7 VGE = ±15V Tj = 150°C VBus = 300V IC = 75A ²Tj = RG = 4.7 150°C 110 45 200 Tf Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance pF ns 40 120 50 250 60 ns 0.6 mJ 2.6 mJ 0.6 °C/W Max Unit 600 250 V µA Reverse diode ratings and characteristics (Per diode) VRRM IRM Peak Repetitive Reverse Voltage Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions RthJC Typ VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs Er Min Reverse Recovery Energy Junction to Case Thermal Resistance Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.6 1.2 A 2 ns µC mJ 1.42 www.microsemi.com V °C/W 2-6 APTGT75X60T3G – Rev 2 November, 2017 Symbol Characteristic APTGT75X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85     T25 T   Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax - 25 125 100 3 110 Unit V °C N.m g See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT75X60T3G – Rev 2 November, 2017 Package outline (dimensions in mm) APTGT75X60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25°C TJ = 150°C VGE=19V 125 125 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25°C 125 E (mJ) 75 TJ=150°C TJ=25°C 3 Er 2 8 9 10 11 0 12 25 50 125 150 Reverse Bias Safe Operating Area Eoff 150 125 Eon 3 IC (A) E (mJ) 100 175 VCE = 300V VGE =15V IC = 75A TJ = 150°C 2 100 75 50 Er 1 75 IC (A) Switching Energy Losses vs Gate Resistance 4 3.5 Eoff VGE (V) 5 3 0 0 7 2.5 1 25 6 1.5 2 VCE (V) Eon TJ=125°C 5 1 VCE = 300V VGE = 15V RG = 4.7Ω TJ = 150°C 4 100 50 0.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=13V 100 TJ=150°C IC (A) IC (A) TJ=125°C 100 VGE=15V TJ=150°C RG=4.7Ω 25 Eon 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 IGBT 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT75X60T3G – Rev 2 November, 2017 Thermal Impedance (°C/W) 0.7 APTGT75X60T3G Forward Characteristic of diode 100 VCE=300V D=50% RG=4.7Ω TJ=150°C 60 50 40 75 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 Tc=85°C 30 Hard switching 20 50 TJ=125°C TJ=150°C 25 10 TJ=25°C 0 0 0 20 40 60 80 0 100 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT75X60T3G – Rev 2 November, 2017 Thermal Impedance (°C/W) 1.6 APTGT75X60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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