APTM100A13SCG

APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged G1 OUT S1 Q2 G2 0/VBUS VBUS 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G2 Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • S2 ID • • OUT S1 Symbol VDSS Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V mΩ W A July, 2006 G1 • mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100A13SCG – Rev 2 S2 VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C APTM100A13SCG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Min VR=200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs www.microsemi.com Typ 15.2 2.6 0.42 562 Max 600 2 156 5 ±450 Unit µA mA mΩ V nA Max Unit nF nC 75 363 Test Conditions DC Forward Current Diode Forward Voltage 130 Inductive switching @125°C VGS = 15V VBus = 667V ID = 65A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ 3 VGS = 10V VBus = 500V ID = 65A Series diode ratings and characteristics IRM Min Tj = 25°C 9 9 50 24 1278 µJ 462 2671 µJ 570 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns Typ Max 350 600 Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 Unit V µA A 1.15 V ns July, 2006 IDSS Test Conditions VGS = 0V,VDS= 1000V nC 2–7 APTM100A13SCG – Rev 2 Symbol Characteristic APTM100A13SCG SiC Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions Min 1200 Tj = 25°C Tj = 125°C Tc = 125°C Tj = 25°C Tj = 175°C VR=1200V DC Forward Current Typ Max 400 800 40 1.6 2.6 1600 8000 VF Diode Forward Voltage IF = 40A QC Total Capacitive Charge IF = 40A, VR = 600V di/dt =2000A/µs 112 Q Total Capacitance f = 1MHz, VR = 200V 360 f = 1MHz, VR = 400V 264 Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V VGS=15&10V 150 6.5V ID, Drain Current (A) 120 6V 90 60 5.5V 30 5V 300 240 180 120 T J=25°C 60 0 TJ=125°C 0 4 8 12 16 20 24 28 0 ID, DC Drain Current (A) V GS=10V 1.2 V GS=20V 1.1 3 4 5 6 7 8 9 10 70 Normalized to VGS =10V @ 32.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1 0.9 0.8 60 50 40 30 20 10 0 0 30 60 90 120 150 180 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4–7 APTM100A13SCG – Rev 2 I D, Drain Current (A) 180 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=32.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=65A TJ=25°C 12 10 V DS =200V V DS =500V 8 VDS=800V 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–7 APTM100A13SCG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A13SCG APTM100A13SCG Delay Times vs Current t d(off) 50 40 40 tr and tf (ns) VDS=667V RG=0.5Ω T J=125°C L=100µH 30 20 t d(on) 30 20 10 10 0 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 I D, Drain Current (A) ID, Drain Current (A) 4 3 VDS=667V RG=0.5Ω T J=125°C L=100µH Switching Energy (mJ) 4 90 100 Switching Energy vs Gate Resistance Switching Energy vs Current 5 Switching Energy (mJ) tr 0 20 Eon 2 Eoff 1 0 Eon 3 2 Eoff VDS=667V ID=65A T J=125°C L=100µH 1 0 20 30 40 50 60 70 80 90 100 0 ID, Drain Current (A) 1 2 3 4 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 ZCS 400 300 I DR, Reverse Drain Current (A) 500 VDS=667V D=50% RG=0.5Ω T J=125°C T C=75°C Hars switching 200 ZVS 100 0 10 20 30 40 50 ID, Drain Current (A) 60 100 T J=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Frequency (kHz) tf VDS=667V RG=0.5Ω T J=125°C L=100µH www.microsemi.com 6–7 APTM100A13SCG – Rev 2 td(on) and td(off) (ns) Rise and Fall times vs Current 50 60 APTM100A13SCG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1600 TJ=25°C 70 60 TJ=75°C 50 40 T J=125°C 30 20 TJ=175°C 10 IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 80 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 1200 800 T J=75°C T J=125°C 400 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 2800 2400 2000 1600 1200 800 400 0 1000 July, 2006 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100A13SCG – Rev 2 1