APTM100A18FTG

APTM100A18FTG Phase leg MOSFET Power Module VBUS VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NT C2 Q1 G1 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration OUT Q2 G2 S2 G2 S2 VB US 0/VBUS NT C1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant OUT OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 43 33 172 ±30 210 780 25 50 3000 Unit V A V mΩ W A July, 2006 0/VBUS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100A18FTG– Rev 2 S1 APTM100A18FTG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 180 3 Min VGS = 10V VBus = 500V ID = 43A Typ 10.4 1.76 0.32 372 Unit Max Unit µA mΩ V nA nF nC 244 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω 12 40 1800 µJ 1246 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω Test Conditions ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω 2846 µJ 1558 Min Typ Tj = 25°C Max 43 33 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 43A IS = - 43A VR = 670V diS/dt = 200A/µs Max 200 1000 210 5 ±150 48 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 7.2 Tj = 125°C 19.5 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM100A18FTG– Rev 2 Electrical Characteristics APTM100A18FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 I D, Drain Current (A) 120 100 80 60 T J=25°C 40 20 5V 0 0 5 10 15 20 25 T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 0.8 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1 3 45 Normalized to VGS =10V @ 21.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 www.microsemi.com 4–6 APTM100A18FTG– Rev 2 I D, Drain Current (A) VGS =15, 10&8V 100 APTM100A18FTG 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) 2.5 VGS =10V ID=21.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 Single pulse TJ =150°C TC=25°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 ID=43A TJ =25°C 12 VDS=200V VDS=500V 10 V DS =800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100A18FTG– Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM100A18FTG Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =2.5Ω T J=125°C L=100µH 120 80 0 40 tr 0 10 30 50 70 90 10 I D, Drain Current (A) Eon V DS =670V RG =2.5Ω T J=125°C L=100µH Eoff 2 1 0 5 4 30 50 70 2 Eoff 1 90 0 5 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 200 ZCS I DR, Reverse Drain Current (A) 250 Frequency (kHz) Eon 3 I D, Drain Current (A) ZVS 150 50 Eoff VDS=670V ID=43A T J=125°C L=100µH 6 0 10 100 90 7 Switching Energy (mJ) Switching Energy (mJ) 3 30 50 70 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 5 4 tf 20 t d(on) 40 V DS =670V RG =2.5Ω T J=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C Hard switching 0 15 20 25 30 35 ID, Drain Current (A) T J=150°C T J=25°C 10 1 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100A18FTG– Rev 2 July, 2006 10 100