APTM100AM90FG

APTM100AM90FG VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C Phase leg MOSFET Power Module Application VBUS • • • • Q1 G1 OUT S1 Features Q2 • G2 S2 0/VBUS • • • VBUS 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT S1 Benefits G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000 Unit V A V mΩ W A July, 2006 • • • • • S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100AM90FG– Rev 2 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control APTM100AM90FG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 90 3 Min VGS = 10V VBus = 500V ID = 78A Typ 20.7 3.5 0.64 744 Unit Max Unit µA mΩ V nA nF nC 488 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A R G =1.2Ω 12 40 3.6 mJ 2.5 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2Ω Test Conditions ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2Ω 5.7 mJ 3.1 Min Typ Tj = 25°C Max 78 59 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 78A IS = - 78A VR = 670V diS/dt = 400A/µs Max 400 2000 105 5 ±250 96 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 14.4 Tj = 125°C 38.9 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM100AM90FG– Rev 2 Electrical Characteristics APTM100AM90FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) 240 200 160 120 T J=25°C 80 40 5V 0 0 5 10 15 20 25 T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 0.8 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance V GS=10V 1 3 80 Normalized to VGS =10V @ 39A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 4–6 APTM100AM90FG– Rev 2 I D, Drain Current (A) V GS=15, 10&8V 200 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=39A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by R DSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 ID=78A TJ=25°C 12 10 VDS=200V V DS =500V V DS=800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100AM90FG– Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100AM90FG APTM100AM90FG Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =1.2Ω T J=125°C L=100µH 120 80 0 40 tr 0 20 40 60 80 100 120 140 160 20 ID, Drain Current (A) 60 80 100 120 140 160 I D, Drain Current (A) 14 Eon VDS=670V RG=1.2Ω TJ=125°C L=100µH 8 6 Switching Energy (mJ) Eoff 4 2 0 VDS=670V ID=78A T J=125°C L=100µH 12 10 Eoff 8 Eon 6 4 Eoff 2 0 20 40 60 80 100 120 140 160 0 I D, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 250 ZVS 200 ZCS 150 50 Hard switching 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 VDS=670V D=50% RG=1.2Ω T J=125°C T C=75°C 100 TJ=150°C 100 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100AM90FG– Rev 2 Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 10 Frequency (kHz) tf 20 td(on) 40 VDS=670V RG=1.2Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200