APTM100H18FG

APTM100H18FG Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application VB US • • • • Q3 Features S3 Q2 Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 43 33 172 ±30 210 780 25 50 3000 Unit V A V mΩ W A July, 2006 S1 OUT2 G3 OUT1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100H18FG– Rev 1 Q1 APTM100H18FG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 180 3 Min VGS = 10V VBus = 500V ID = 43A Typ 10.4 1.76 0.32 372 Unit Max Unit µA mΩ V nA nF nC 244 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω 12 40 1800 µJ 1246 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω Test Conditions ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω 2846 µJ 1558 Min Typ Tj = 25°C Max 43 33 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 43A IS = - 43A VR = 670V diS/dt = 200A/µs Max 200 1000 210 5 ±150 48 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 7.2 Tj = 125°C 19.5 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM100H18FG– Rev 1 Electrical Characteristics APTM100H18FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 I D, Drain Current (A) 120 100 80 60 T J=25°C 40 20 5V 0 0 5 10 15 20 25 T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 0.8 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1 3 45 Normalized to VGS =10V @ 21.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 4–6 APTM100H18FG– Rev 1 I D, Drain Current (A) VGS =15, 10&8V 100 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=21.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 Single pulse TJ =150°C TC=25°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=43A TJ =25°C 12 VDS=200V VDS=500V 10 V DS =800V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100H18FG– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H18FG APTM100H18FG Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =2.5Ω T J=125°C L=100µH 120 80 0 40 tr 0 10 30 50 70 90 10 I D, Drain Current (A) Eon V DS =670V RG =2.5Ω T J=125°C L=100µH Eoff 2 1 0 5 4 30 50 70 2 Eoff 1 90 0 5 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 ZVS 150 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C Hard switching 0 10 15 20 25 30 35 ID, Drain Current (A) 40 100 T J=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 ZCS Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100H18FG– Rev 1 200 I DR, Reverse Drain Current (A) 250 Frequency (kHz) Eon 3 I D, Drain Current (A) 50 Eoff VDS=670V ID=43A T J=125°C L=100µH 6 0 10 100 90 7 Switching Energy (mJ) Switching Energy (mJ) 3 30 50 70 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 5 4 tf 20 t d(on) 40 V DS =670V RG =2.5Ω T J=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200