APTM100H35FTG

APTM100H35FTG Full - Bridge MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control VBUS Q3 Q1 VDSS = 1000V RDSon = 350m typ @ Tj = 25°C ID = 22A @ Tc = 25°C G3 G1 S1 OUT1 S3 OUT2 Q4 Q2 G2 G4 S2 S4 NTC1 0/VBU S NTC2 Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - Lead frames for power connections  Internal thermistor for temperature monitoring  High level of integration Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1– APTM100H35FTG– Rev 2 October, 2012 Symbol VDSS APTM100H35FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0V Typ 350 3 Max 100 500 420 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 22A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 5.2 0.88 0.16 nF 186 nC 24 122 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 900 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 1423 µJ 623 µJ 779 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 22 17 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 22A IS = - 22A VR = 670V diS/dt = 100A/µs Tj = 25°C 3.6 Tj = 125°C 9.72 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt  700A/µs VR  VDSS Tj  150°C IS  - 22A www.microsemi.com 2– APTM100H35FTG– Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM100H35FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ Max 0.32 150 125 100 4.7 160 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3– APTM100H35FTG– Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTM100H35FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS=15, 10&8V 50 7V 40 6.5V 30 6V 20 5.5V 10 0 5 10 15 20 25 60 50 40 30 TJ=25°C 20 10 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1.2 VGS=10V VGS=20V 1 3 4 5 6 7 8 9 25 Normalized to VGS=10V @ 11A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 20 15 10 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4– APTM100H35FTG– Rev 2 October, 2012 ID, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=11A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs limited by RDSon 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 0.6 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=22A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 5– APTM100H35FTG– Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H35FTG APTM100H35FTG Delay Times vs Current Rise and Fall times vs Current 80 180 td(off) VDS=670V RG=5Ω TJ=125°C L=100µH 70 140 60 120 tr and tf (ns) VDS=670V RG=5Ω TJ=125°C L=100µH 100 80 60 40 50 40 tr 30 20 td(on) 10 20 0 0 0 10 20 30 40 50 0 10 ID, Drain Current (A) 50 4 Eon VDS=670V RG=5Ω TJ=125°C L=100µH 2 1.5 Switching Energy (mJ) Switching Energy (mJ) 20 30 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 Eoff 1 0.5 0 VDS=670V ID=22A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 Eoff 1 0.5 0 0 10 20 30 40 50 0 ID, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 225 200 Frequency (kHz) tf ZVS 175 150 125 100 75 ZCS VDS=670V D=50% RG=5Ω TJ=125°C TC=75°C 50 25 0 5 8 Hard switching 10 13 15 18 ID, Drain Current (A) 20 www.microsemi.com 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 6– APTM100H35FTG– Rev 2 October, 2012 td(on) and td(off) (ns) 160 APTM100H35FTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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