APTM100H45FT3G
VDSS = 1000V
RDSon = 450m typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
Full - Bridge
MOSFET Power Module
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
18
14
72
±30
540
357
18
50
2500
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1–7
APTM100H45FT3G – Rev 3 December, 2017
Symbol
VDSS
APTM100H45FT3G
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS= 1000V
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Min
Typ
450
3
Max
100
540
5
±150
Unit
µA
m
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energ
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
4350
715
120
pF
154
VGS = 10V
VBus = 500V
ID = 18A
26
nC
97
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
639
µJ
380
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
1046
µJ
451
0.35
°C/W
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
18
14
1.3
18
340
Tj = 125°C
640
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 18A
IS = - 18A
VR = 667V
diS/dt = 100A/µs
Tj = 25°C
1.78
Tj = 125°C
4.47
Unit
A
V
V/ns
ns
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 18A di/dt 700A/µs
VR VDSS
Tj 150°C
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2–7
APTM100H45FT3G – Rev 3 December, 2017
Symbol Characteristic
Continuous Source current
IS
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTM100H45FT3G
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
150
TJmax - 25
125
125
3
110
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B25 / 85
T25 T
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM100H45FT3G – Rev 3 December, 2017
Package outline (dimensions in mm)
APTM100H45FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
40
6.5V
30
6V
20
5.5V
10
0
5
10
15
20
25
60
50
TJ=125°C
40
30
TJ=25°C
20
10
5V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
7V
VGS=15&8V
TJ=125°C
30
0
Normalized to
VGS=10V @ 9A
1.2
VGS=10V
1.1
VGS=20V
1
0.9
0.8
0
10
20
30
2
3
4
5
6
7
8
9 10
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
40
20
18
16
14
12
10
8
6
4
2
0
50
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM100H45FT3G – Rev 3 December, 2017
50
ID, Drain Current (A)
ID, Drain Current (A)
60
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=9A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
limited by
RDSon
1ms
10
10ms
Single pulse
TJ=150°C
TC=25°C
1
0.6
0
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
1000
Coss
Crss
100
10
0
10
20
30
40
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=18A
TJ=25°C
12
10
50
VDS, Drain to Source Voltage (V)
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
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5–7
APTM100H45FT3G – Rev 3 December, 2017
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100H45FT3G
APTM100H45FT3G
Delay Times vs Current
Rise and Fall times vs Current
60
160
td(off)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
50
120
100
tr and tf (ns)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
30
tr
20
40
td(on)
20
10
0
0
5
10
15
20
25
30
35
40
5
10
ID, Drain Current (A)
35
40
2.5
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
1.5
Eon
1
Eoff
0.5
VDS=667V
ID=18A
TJ=125°C
L=100µH
2
Switching Energy (mJ)
Switching Energy (mJ)
15
20
25
30
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
1.5
Eoff
Eon
1
Eoff
0.5
0
0
5
10
15
20
25
30
35
40
0
ID, Drain Current (A)
5
10
15
20
25
30
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZVS
200
ZCS
IDR, Reverse Drain Current (A)
300
Frequency (kHz)
tf
VDS=667V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
100
Hard
switching
50
100
TJ=150°C
0
6
8
10
12
14
16
ID, Drain Current (A)
TJ=25°C
10
18
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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6–7
APTM100H45FT3G – Rev 3 December, 2017
td(on) and td(off) (ns)
140
APTM100H45FT3G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM100H45FT3G – Rev 3 December, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
