APTM100H45SCTG

APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 ID IDM VGS RDSon PD IAR EAR EAS • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G4 S3 S4 0/VBUS • • OUT2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT1 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF NTC2 G3 VBUS • Parameter Drain - Source Breakdown Voltage T c = 25°C T c = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy T c = 25°C Max ratings 1000 18 14 72 ±30 540 357 18 50 2500 Unit V A V mΩ W A July, 2006 S1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100H45SCTG – Rev 2 CR1B Q1 VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C APTM100H45SCTG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A IF VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 133V di/dt = 200A/µs Unit mΩ V nA pF nC 12 35 383 627 µJ 451 Typ Max 250 500 Tj = 125°C 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 www.microsemi.com µJ 380 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 121 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, R G = 5Ω IF = 30A IF = 60A IF = 30A Max µA 10 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, R G = 5Ω DC Forward Current Unit 97 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A R G = 5Ω VR=200V Typ 4350 715 120 154 Max 100 500 540 5 ±100 26 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 450 3 Min Series diode ratings and characteristics IRM Typ Unit V µA A 1.15 V July, 2006 IDSS Test Conditions ns nC 2–7 APTM100H45SCTG – Rev 2 Electrical Characteristics Symbol Characteristic APTM100H45SCTG Parallel SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V Min 1200 Tj = 25°C Tj = 150°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 100 200 10 1.6 2.6 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =800A/µs 28 Q Total Capacitance f = 1MHz, VR = 200V 90 f = 1MHz, VR = 400V 66 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Series diode Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 60 50 40 30 T J=25°C 20 10 5V 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 9A V GS=10V 1.2 1.1 VGS=20V 1 0.9 0.8 0 10 20 30 2 3 4 5 6 7 8 9 10 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS , Drain to Source Voltage (V) 1.4 T J=-55°C 40 20 18 16 14 12 10 8 6 4 2 0 50 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 0 T J=125°C 0 5–7 APTM100H45SCTG – Rev 2 50 ID, Drain Current (A) I D, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=9A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms 1 Single pulse TJ =150°C TC=25°C 0 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss Crss 100 10 14 ID=18A TJ=25°C 12 10 VDS=200V V DS =500V VDS=800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 40 80 120 160 200 Gate Charge (nC) July, 2006 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 6–7 APTM100H45SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H45SCTG APTM100H45SCTG Delay Times vs Current Rise and Fall times vs Current 60 160 t d(off) V DS =667V RG =5Ω T J=125°C L=100µH 50 120 100 tr and tf (ns) VDS=667V RG=5Ω TJ=125°C L=100µH 80 60 40 30 tr 20 40 td(on) 20 10 0 0 5 10 15 20 25 30 35 40 5 10 I D, Drain Current (A) 35 40 2.5 V DS =667V RG =5Ω T J=125°C L=100µH 1 Eon Eoff 0.5 V DS =667V ID=18A T J=125°C L=100µH 2 Switching Energy (mJ) Switching Energy (mJ) 15 20 25 30 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 1.5 Eoff 1 Eon 0.5 0 Eoff 0 5 10 15 20 25 30 35 40 0 I D, Drain Current (A) 5 10 15 20 25 30 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=5Ω T J=125°C T C=75°C 150 100 Hard switching 50 0 6 8 10 12 14 16 ID, Drain Current (A) 100 TJ=150°C T J=25°C 10 1 18 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Frequency (kHz) tf www.microsemi.com 7–7 APTM100H45SCTG – Rev 2 td(on) and td(off) (ns) 140 APTM100H45SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 400 15 IR Reverse Current (µA) I F Forward Current (A) TJ=25°C TJ=75°C 10 T J=125°C 5 TJ=175°C 300 200 0.5 1 1.5 2 2.5 3 T J=125°C 100 0 0 T J=75°C 3.5 VF Forward Voltage (V) T J=175°C 0 400 600 T J=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 July, 2006 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–7 APTM100H45SCTG – Rev 2 1