APTM100UM45FAG

APTM100UM45FAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance D Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 215 160 860 ±30 52 5000 30 50 3200 Unit V A V mΩ W A July, 2006 SK mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM45FAG – Rev 2 DK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control APTM100UM45FAG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 45 3 Min VGS = 10V VBus = 500V ID = 215A Typ 42.7 7.6 1.3 1602 Unit µA mA mΩ V nA Max Unit nF nC 1038 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 215A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5Ω Test Conditions 18 14 140 ns 55 7.2 mJ 4.3 12 mJ 5.8 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 215A IS = - 215A VR = 670V diS/dt = 600A/µs Max 600 3 52 5 ±600 204 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C Tj = 125°C Tj = 25°C 12 Tj = 125°C 36 Max 215 160 1.3 18 310 625 Unit A V V/ns ns µC July, 2006 IDSS Test Conditions X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 215A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM100UM45FAG – Rev 2 Electrical Characteristics Symbol Characteristic APTM100UM45FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 480 360 TJ=25°C 240 120 TJ=125°C 5V 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) Normalized to VGS =10V @ 107.5A 1.3 1.2 1.1 VGS=10V VGS=20V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 240 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.9 0.8 210 180 150 120 90 60 30 0 0 120 240 360 480 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM100UM45FAG – Rev 2 I D, Drain Current (A) 480 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=107.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 1ms 100 Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss Coss 10000 Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=215A TJ=25°C 12 10 VDS=200V VDS=500V VDS=800V 8 6 4 2 0 0 350 700 1050 1400 1750 2100 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100UM45FAG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM45FAG APTM100UM45FAG Delay Times vs Current Rise and Fall times vs Current 100 t d(off) 120 V DS=670V RG =0.5Ω T J=125°C L=100µH 90 60 td(on) 30 VDS=670V RG=0.5Ω T J=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 150 60 40 tr 20 0 0 80 120 160 200 240 280 320 360 400 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current VDS=670V RG=0.5Ω TJ=125°C L=100µH 20 16 Eoff 12 8 4 0 30 24 Eoff 6 0 0 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 Frequency (kHz) Eon 12 ID, Drain Current (A) 200 50 Eoff 18 80 120 160 200 240 280 320 360 400 100 VDS=670V ID=215A T J=125°C L=100µH 36 Eon Switching Energy (mJ) Switching Energy (mJ) 24 150 tf ZCS VDS=670V D=50% RG=0.5Ω T J=125°C T C=75°C ZVS Hard switching 0 50 80 110 140 170 ID, Drain Current (A) 200 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM45FAG – Rev 2 July, 2006 20 T J=150°C 100