APTM100UM65SCAVG

APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control SK S G, SK and DK terminals are for control signals only (not for power) • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors High level of integration AlN substrate for improved MOSFET thermal performance DK S SK G D • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTM100UM65SCAVG – Rev 3 G July, 2015 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged APTM100UM65SCAVG Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V mΩ W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Typ 65 3 Max 400 2 78 5 ±400 Unit µA mA mΩ V nA Dynamic Characteristics Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 670V ID = 145A RG = 0.75Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Min Typ 28.5 5.08 0.9 Max nF 1068 136 nC 692 18 14 140 ns 55 2.9 mJ 2.9 4.8 mJ 3.9 0.038 www.microsemi.com Unit July, 2015 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance °C/W 2–9 APTM100UM65SCAVG – Rev 3 Symbol Ciss Coss Crss APTM100UM65SCAVG Series diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VR=1000V Diode Forward Voltage IF = 240A IF = 480A IF = 240A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Tc = 25°C IF = 240A VR = 667V di/dt = 800A/µs Typ Tj = 125°C 240 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 3 Tj = 125°C 14.4 Junction to Case Thermal Resistance Max Unit 1000 500 V µA A 2.5 V ns µC 0.23 °C/W Max 1200 2400 12000 Unit V SiC Parallel diode ratings and characteristics Symbol Characteristic VRRM Peak Repetitive Reverse Voltage IRM IF Reverse Leakage Current Test Conditions VR=1200V DC Forward Current Min Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ 384 672 120 1.6 2.3 VF Diode Forward Voltage IF = 120A QC Total Capacitive Charge IF = 120A, VR = 1200V di/dt =5000A/µs 960 C Total Capacitance f = 1MHz, VR = 200V 1152 f = 1MHz, VR = 400V 828 RthJC Junction to Case Thermal Resistance µA A 1.8 3.0 V nC pF 0.18 °C/W Thermal and package characteristics Wt www.microsemi.com Min 4000 -40 -40 -40 -40 3 2 1 Max 150 TJmax -25 125 100 5 3.5 1.5 300 Unit V °C N.m July, 2015 Torque Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To heatsink M6 M5 Mounting torque For terminals M3 Package Weight g 3–9 APTM100UM65SCAVG – Rev 3 Symbol VISOL TJ TJOP TSTG TC APTM100UM65SCAVG SP6 Package outline (dimensions in mm) www.microsemi.com 4–9 APTM100UM65SCAVG – Rev 3 July, 2015 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100UM65SCAVG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 Single Pulse 0.1 0.05 0.005 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 360 480 VGS=15, 10V 7V 280 ID, Drain Current (A) 6.5V 240 200 6V 160 120 80 5.5V 40 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 80 TJ=125°C 5V 0 0 5 10 15 20 25 30 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 72.5A 1.3 1.2 1.1 VGS=10V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) VGS=20V 0.9 120 80 40 0.8 0 0 80 160 240 320 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2015 RDS(on) Drain to Source ON Resistance TJ=25°C 0 5–9 APTM100UM65SCAVG – Rev 3 ID, Drain Current (A) 320 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=72.5A 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area 100µs ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 75 1000 1.0 0.9 0.8 0.7 limited by RDSon 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 25 50 75 100 125 TC, Case Temperature (°C) 1 150 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 14 ID=145A TJ=25°C 12 10 VDS=200V VDS=500V VDS=800V 8 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 300 600 900 1200 1500 Gate Charge (nC) July, 2015 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 50 TJ, Junction Temperature (°C) www.microsemi.com 6–9 APTM100UM65SCAVG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM65SCAVG APTM100UM65SCAVG Delay Times vs Current Rise and Fall times vs Current 100 160 VDS=670V RG=0.75Ω TJ=125°C L=100µH 80 120 tr and tf (ns) VDS=670V RG=0.75Ω TJ=125°C L=100µH 80 40 td(on) 60 40 tr 20 0 0 50 94 138 182 226 270 50 94 ID, Drain Current (A) 6 Switching Energy (mJ) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 8 Eon Eoff 4 2 0 18 Eoff 14 10 Eon 6 94 138 182 226 270 0 ID, Drain Current (A) 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 300 IDR, Reverse Drain Current (A) 1000 250 ZVS ZCS 200 VDS=670V D=50% RG=0.75Ω TJ=125°C TC=75°C Hard switching 0 15 35 55 75 95 115 135 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) July, 2015 Frequency (kHz) VDS=670V ID=145A TJ=125°C L=100µH 22 2 50 50 270 26 10 100 138 182 226 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 150 tf www.microsemi.com 7–9 APTM100UM65SCAVG – Rev 3 td(on) and td(off) (ns) td(off) APTM100UM65SCAVG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.1 0.04 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 240 1200 180 TJ=75°C 120 TJ=125°C 60 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 1050 900 750 600 TJ=75°C 450 TJ=125°C 300 TJ=175°C 150 0 400 VF Forward Voltage (V) 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 8000 6000 5000 4000 3000 2000 1000 0 10 100 VR Reverse Voltage 1000 July, 2015 1 www.microsemi.com 8–9 APTM100UM65SCAVG – Rev 3 C, Capacitance (pF) 7000 APTM100UM65SCAVG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 9–9 APTM100UM65SCAVG – Rev 3 July, 2015 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.