APTM10DHM05G

APTM10DHM05G Asymmetrical - Bridge MOSFET Power Module Application VBUS Q1     CR3 G1 OUT2 S1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Q4 OUT1 VDSS = 100V RDSon = 4.5m typ @ Tj = 25°C ID = 278A @ Tc = 25°C  CR2 G4 S4 0/VBUS    Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits      Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM10DHM05G– Rev 2 October, 2012 Symbol VDSS APTM10DHM05G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 4.5 2 Max 200 1000 5 4 ±200 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 250A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 20 8 2.9 nF 700 nC 120 360 80 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A RG = 2.5  165 ns 280 135 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, RG =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, RG = 2.5Ω 1.1 mJ 1.2 1.22 mJ 1.28 Diode ratings and characteristics VRRM IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 200 Maximum Peak Repetitive Reverse Voltage VR=200V IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt =400A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Unit 350 600 Tj = 125°C 200 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 400 Tj = 125°C 1680 µA A V ns nC 2-7 APTM10DHM05G– Rev 2 October, 2012 Symbol Characteristic APTM10DHM05G Thermal and package characteristics Symbol Characteristic Min transistor diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.16 0.29 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3-7 APTM10DHM05G– Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM10DHM05G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 240 VGS=15V, 10V & 9V 1000 ID, Drain Current (A) 800 600 8V 400 7V 6V 200 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 160 120 80 TJ=25°C 40 0 TJ=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 125A 1.1 VGS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 300 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 250 200 150 100 0.8 50 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-7 APTM10DHM05G– Rev 2 October, 2012 ID, Drain Current (A) Low Voltage Output Characteristics 1200 APTM10DHM05G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 125A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 25 50 75 100 125 150 Maximum Safe Operating Area 1000 100µs limited by RDSon 100 0.6 1ms Single pulse TJ=150°C TC=25°C 10ms 10 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=250A TJ=25°C 14 VDS=20V 12 VDS=50V 10 VDS=80V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) 5-7 APTM10DHM05G– Rev 2 October, 2012 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10DHM05G Delay Times vs Current Rise and Fall times vs Current 250 350 250 td(off) VDS=66V RG=2.5Ω TJ=125°C L=100µH 200 150 td(on) 100 150 tf 100 0 0 0 100 200 300 ID, Drain Current (A) 400 0 5 2 Switching Energy (mJ) VDS=66V RG=2.5Ω TJ=125°C L=100µH 2.5 Eoff 1.5 Eon 1 0.5 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance Switching Energy vs Current 3 Eoff 0 VDS=66V ID=200A TJ=125°C L=100µH 4 Eoff 3 Eon 2 1 0 100 200 300 400 0 5 ID, Drain Current (A) Operating Frequency vs Drain Current ZCS Hard switching 60 ZVS VDS=66V D=50% RG=2.5Ω TJ=125°C TC=75°C 40 20 0 50 100 150 15 20 25 30 200 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 100 80 10 Gate Resistance (Ohms) 1000 TJ=150°C 100 TJ=25°C 10 250 ID, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTM10DHM05G– Rev 2 October, 2012 0 Frequency (kHz) tr 50 50 Eon and Eoff (mJ) VDS=66V RG=2.5Ω TJ=125°C L=100µH 200 tr and tf (ns) td(on) and td(off) (ns) 300 APTM10DHM05G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7-7 APTM10DHM05G– Rev 2 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.