APTM10DSKM09T3G

APTM10DSKM09T3G VDSS = 100V RDSon = 9m typ @ Tj = 25°C ID = 139A @ Tc = 25°C Dual Buck chopper MOSFET Power Module 13 14 Q1 Application  AC and DC motor control  Switched Mode Power Supplies Q2 Features  Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring 11 18 22 7 19 10 23 CR1 29 15 30 8 CR2 31 32 R1 16 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a single buck of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per MOSFET) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 139 100 * 430 ±30 10 390 100 50 3000 Unit V A December, 2017 ID Parameter Drain - Source Voltage V m W A mJ * Specification of MOSFET device but output current must be limited due to size of output pins. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTM10DSKM09T3G – Rev 3 Symbol VDSS APTM10DSKM09T3G Electrical Characteristics (per MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Min Typ 9 2 Max 100 10 4 ±150 Unit µA m V nA Max Unit Dynamic Characteristics (per MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 9875 3940 1470 pF 350 VGS = 10V VBus = 50V ID =139A 60 nC 180 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A RG = 5Ω 70 ns 95 125 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 552 µJ 604 Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 608 µJ 641 0.32 °C/W Max Unit Chopper Diode ratings and characteristics (per diode) IRM Typ Peak Repetitive Reverse Voltage Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min VR = 200V Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/µs Tj = 125°C 100 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 200 Tj = 125°C 840 Junction to Case Thermal Resistance 200 V 250 µA A V ns nC 0.55 www.microsemi.com December, 2017 VRRM Test Conditions °C/W 2–7 APTM10DSKM09T3G – Rev 3 Symbol Characteristic APTM10DSKM09T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax - 25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85     T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM10DSKM09T3G – Rev 3 December, 2017 Package outline (dimensions in mm) APTM10DSKM09T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 0 TJ=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 69.5A 1.1 VGS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) 120 100 0.8 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) 25 50 75 100 125 December, 2017 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM10DSKM09T3G – Rev 3 ID, Drain Current (A) 600 APTM10DSKM09T3G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100µs 100 1ms Single pulse TJ=150°C TC=25°C 10 0.6 10ms 1 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A TJ=25°C 14 VDS=20V 12 VDS=50V 10 VDS=80V 8 6 4 2 0 0 100 200 300 400 500 December, 2017 0 Gate Charge (nC) 5–7 APTM10DSKM09T3G – Rev 3 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10DSKM09T3G Delay Times vs Current Rise and Fall times vs Current 160 120 td(off) 80 VDS=66V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 120 100 tr 60 40 20 0 0 0 50 100 150 200 ID, Drain Current (A) 0 250 2.5 1 Switching Energy (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH Eoff Eon 0.5 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 Eon VDS=66V ID=139A TJ=125°C L=100µH 2 Eoff 1.5 1 Eon 0.5 0 0 100 150 200 250 0 10 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C 200 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 250 20 Gate Resistance (Ohms) 1000 TJ=150°C 100 TJ=25°C 10 150 ID, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 December, 2017 50 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM10DSKM09T3G – Rev 3 0 Frequency (kHz) tf 80 20 Eon and Eoff (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH 140 tr and tf (ns) td(on) and td(off) (ns) 100 APTM10DSKM09T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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