APTM10DSKM19T3G
VDSS = 100V
RDSon = 19m typ @ Tj = 25°C
ID = 70A @ Tc = 25°C
Dual Buck chopper
MOSFET Power Module
13 14
Q1
Application
AC and DC motor control
Switched Mode Power Supplies
Q2
11
18
22
7
23
8
19
Features
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
10
CR1
29
15
30
CR2
31
32
R1
16
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (per MOSFET)
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
70
50
300
±30
21
208
75
30
1500
Unit
V
December, 2017
ID
Parameter
Drain - Source Voltage
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1-7
APTM10DSKM19T3G – Rev 3
Symbol
VDSS
APTM10DSKM19T3G
Electrical Characteristics (per MOSFET)
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 100V
VGS = 10V, ID = 35A
VGS = VDS, ID = 1mA
VGS = ±30 V, VDS = 0V
Min
Typ
19
2
Max
250
21
4
±100
Unit
µA
m
V
nA
Max
Unit
Dynamic Characteristics (per MOSFET)
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
5100
1900
800
pF
200
VGS = 10V
VBus = 100V
ID = 70A
40
nC
92
35
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 70A
RG = 5
70
ns
95
125
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 70A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 70A, RG = 5Ω
276
µJ
302
304
µJ
320
0.6
°C/W
Max
Unit
200
250
V
µA
A
Chopper diode ratings and characteristics (per diode)
VF
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward Current
VR=200V
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Min
Tc = 80°C
IF = 60A
VR = 133V
di/dt
=200A/µs
Junction to Case Thermal Resistance
Typ
Tj = 125°C
60
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
Tj = 25°C
60
60
Tj = 125°C
250
V
ns
nC
0.9
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December, 2017
VRRM
IRM
IF
Test Conditions
°C/W
2-7
APTM10DSKM19T3G – Rev 3
Symbol Characteristic
APTM10DSKM19T3G
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
150
TJmax - 25
125
125
3
110
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B25 / 85
T25 T
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
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3-7
APTM10DSKM19T3G – Rev 3
December, 2017
Package outline (dimensions in mm)
APTM10DSKM19T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
125
VGS=15V, 10V & 9V
250
200
ID, Drain Current (A)
8V
150
7V
100
6V
50
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
75
TJ=-55°C
50
TJ=25°C
25
TJ=125°C
TJ=-55°C
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
8
70
Normalized to
VGS=10V @ 35A
1.4
VGS=10V
1.2
VGS=20V
1
1
2
3
4
5
6
7
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.6
ID, DC Drain Current (A)
0.8
60
50
40
30
20
10
0
0
50
100
150
200
250
ID, Drain Current (A)
25
50
75
100
125
December, 2017
RDS(on) Drain to Source ON Resistance
TJ=125°C
150
TC, Case Temperature (°C)
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4-7
APTM10DSKM19T3G – Rev 3
ID, Drain Current (A)
300
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 35A
2.0
1.5
1.0
0.5
0.0
-50 -25
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
1ms
limited by
RDSon
100
10ms
10
Single pulse
TJ=150°C
TC=25°C
100ms
1
0
25 50
75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=70A
TJ=25°C
14
VDS=20V
12
VDS=50V
10
VDS=80V
8
6
4
2
0
0
40
80
120 160 200 240 280
December, 2017
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
Gate Charge (nC)
5-7
APTM10DSKM19T3G – Rev 3
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10DSKM19T3G
APTM10DSKM19T3G
Delay Times vs Current
Rise and Fall times vs Current
160
120
td(off)
80
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
120
100
80
tr
60
20
0
0
0
20
40
60
80
100
ID, Drain Current (A)
0
120
1.5
0.5
Switching Energy (mJ)
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Eon
0.25
20
40
60
80
100
ID, Drain Current (A)
120
Switching Energy vs Gate Resistance
Switching Energy vs Current
0.75
Eon
0
VDS=66V
ID=70A
TJ=125°C
L=100µH
1
Eoff
0.5
Eon
0
40
60
80
100
120
0
10
ID, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
200
VDS=66V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
100
ZVS
Hard
switching
50
0
13
25
38
50
30
40
50
60
63
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
250
20
Gate Resistance (Ohms)
75
ID, Drain Current (A)
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
December, 2017
20
VSD, Source to Drain Voltage (V)
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6-7
APTM10DSKM19T3G – Rev 3
0
Frequency (kHz)
tf
40
20
Eon and Eoff (mJ)
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
140
tr and tf (ns)
td(on) and td(off) (ns)
100
APTM10DSKM19T3G
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
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recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7-7
APTM10DSKM19T3G – Rev 3
December, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
