APTM10DUM02G
VDSS = 100V
RDSon = 2.25m typ @ Tj = 25°C
ID = 495A @ Tc = 25°C
Dual Common Source
MOSFET Power Module
D1
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
D2
Q1
Q2
G1
G2
S1
S2
S
Features
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
495
370
1900
±30
2.5
1250
100
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTM10DUM02G– Rev 2 October, 2012
Symbol
VDSS
APTM10DUM02G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 200A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
2.25
2
Max
400
2000
2.5
4
±400
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
1360
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 400A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 400A
RG = 1.25
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 400A, RG =1.25Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 400A, RG = 1.25Ω
160
240
500
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
40
15.7
5.9
nF
nC
240
720
ns
160
2.2
mJ
2.41
2.43
mJ
2.56
Source - Drain diode ratings and characteristics
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 400A
IS = - 400A
VR = 66V
diS/dt = 400A/µs
Max
495
370
1.3
5
Unit
A
Tj = 25°C
270
V
V/ns
ns
Tj = 25°C
11.6
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR VDSS
Tj 150°C
IS - 495A di/dt 400A/µs
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2-7
APTM10DUM02G– Rev 2 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
trr
Reverse Recovery Time
APTM10DUM02G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Torque
Mounting torque
4000
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.1
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3-7
APTM10DUM02G– Rev 2 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM10DUM02G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
480
VGS=15V, 10V & 9V
2000
ID, Drain Current (A)
1500
8V
1000
7V
6V
500
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
160
TJ=25°C
80
0
TJ=125°C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 200A
1.1
VGS=10V
1
VGS=20V
0.9
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
500
RDS(on) vs Drain Current
1.2
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
400
300
200
100
0.8
0
0
100
200
300
400
500
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4-7
APTM10DUM02G– Rev 2 October, 2012
ID, Drain Current (A)
Low Voltage Output Characteristics
2500
APTM10DUM02G
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
2.5
VGS=10V
ID= 200A
2.0
1.5
1.0
0.5
0.0
-50 -25
1.1
1.0
0.9
0.8
0.7
25
50
75 100 125 150
Maximum Safe Operating Area
100µs
limited by
RDSon
1000
1ms
100
10ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
1
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
Coss
10000
Crss
1000
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=400A
TJ=25°C
14
VDS=20V
12
VDS=50V
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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VDS=80V
8
6
4
2
0
0
400
800
1200
1600
2000
Gate Charge (nC)
5-7
APTM10DUM02G– Rev 2 October, 2012
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
10000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
APTM10DUM02G
Delay Times vs Current
Rise and Fall times vs Current
300
600
250
td(off)
400
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
300
200
tr and tf (ns)
td(on)
200
tf
150
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
100
50
100
0
0
50
150
250 350 450 550
ID, Drain Current (A)
650
50
9
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
3
Eoff
Switching Energy (mJ)
4
Eon
2
1
Eoff
0
250 350 450 550
ID, Drain Current (A)
650
VDS=66V
ID=400A
TJ=125°C
L=100µH
8
7
6
Eoff
5
4
Eon
3
2
1
50
150
250
350
450
550
650
0
2.5
ID, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
30
20
ZVS
10
0
100
VDS=66V
D=50%
RG=1.25Ω
TJ=125°C
TC=75°C
200
Hard
switching
300
400
7.5
10
12.5
15
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
50
40
5
Gate Resistance (Ohms)
60
Frequency (kHz)
150
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
Eon and Eoff (mJ)
tr
1000
TJ=150°C
100
TJ=25°C
10
500
ID, Drain Current (A)
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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6-7
APTM10DUM02G– Rev 2 October, 2012
td(on) and td(off) (ns)
500
APTM10DUM02G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7-7
APTM10DUM02G– Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
