APTM120A29FTG

APTM120A29FTG Phase Leg MOSFET Power Module VBUS VDSS = 1200V RDSon = 290m typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control NTC2 Q1 G1 S1 Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - Lead frames for power connections  Internal thermistor for temperature monitoring  High level of integration OUT Q2 G2 S2 0/VBU S NTC1 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 34 25 136 ±30 348 780 22 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120A29FTG– Rev 2 October, 2012 Symbol VDSS APTM120A29FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 290 3 Max 350 1500 348 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 34A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 10.3 1.54 0.26 nF 374 nC 48 240 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A RG = 2.5 15 ns 160 45 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, RG = 2.5Ω 1980 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, RG = 2.5Ω 3131 µJ 1371 µJ 1714 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 34 25 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 34A IS = - 34A VR = 600V diS/dt = 200A/µs Tj = 25°C 4 Tj = 125°C 14 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt  700A/µs VR  VDSS Tj  150°C IS  - 34A www.microsemi.com 2–7 APTM120A29FTG– Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM120A29FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ Max 0.16 150 125 100 4.7 160 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM120A29FTG– Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTM120A29FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 Single Pulse 0.1 0.05 0.02 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 100 160 6.5V 60 40 6V 20 5.5V 5 10 15 20 25 120 100 80 60 TJ=25°C 40 20 5V 0 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 7V ID, Drain Current (A) TJ=125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 40 Normalized to VGS=10V @ 17A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 30 20 10 0 0 20 40 60 80 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120A29FTG– Rev 2 October, 2012 ID, Drain Current (A) VGS=15, 10 & 8V 80 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=17A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 limited by RDSon 1ms 10 0.6 10ms Single pulse TJ=150°C TC=25°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=34A TJ=25°C 12 10 50 VDS, Drain to Source Voltage (V) VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC) www.microsemi.com 5–7 APTM120A29FTG– Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A29FTG APTM120A29FTG Delay Times vs Current td(off) VDS=800V RG=2.5Ω TJ=125°C L=100µH 150 60 120 tr and tf (ns) VDS=800V RG=2.5Ω TJ=125°C L=100µH 90 60 40 tr 20 td(on) 30 0 0 10 20 30 40 50 60 70 10 20 ID, Drain Current (A) 60 70 7 VDS=800V RG=2.5Ω TJ=125°C L=100µH 5 4 Eon Switching Energy (mJ) Switching Energy (mJ) 30 40 50 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 3 2 1 0 VDS=800V ID=34A TJ=125°C L=100µH 6 5 Eoff 4 Eon 3 Eoff 2 1 10 20 30 40 50 60 70 0.0 ID, Drain Current (A) 2.5 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 ZCS 175 Frequency (kHz) tf 150 125 ZVS 100 VDS=800V D=50% RG=2.5Ω TJ=125°C TC=75°C 75 50 25 Hard switching 0 8 12 16 20 24 28 ID, Drain Current (A) 100 TJ=150°C TJ=25°C 10 1 32 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120A29FTG– Rev 2 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 APTM120A29FTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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