APTM20AM04FG
Phase leg
MOSFET Power Module
VDSS = 200V
RDSon = 4m typ @ Tj = 25°C
ID = 372A @ Tc = 25°C
Application
VBUS
Q1
G1
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
OUT
Features
S1
Q2
G2
S2
0/VBUS
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
372
278
1488
±30
5
1250
100
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM20AM04FG– Rev 3 October, 2012
APTM20AM04FG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 200V
Tj = 25°C
VGS = 0V,VDS = 160V
Tj = 125°C
VGS = 10V, ID = 186A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Typ
4
3
Max
500
2000
5
5
±200
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 372A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
28.9
9.32
0.58
nF
560
nC
212
268
32
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 372A
RG = 1.2
64
ns
88
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω
3396
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω
3744
µJ
3716
µJ
3944
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
372
278
1.3
5
230
Tj = 125°C
450
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 372A
IS = -372A
VR = 133V
diS/dt = 400A/µs
IS = -372A
VR = 133V
diS/dt = 400A/µs
Tj = 25°C
3.6
Tj = 125°C
13.6
Unit
A
V
V/ns
ns
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 372A di/dt 700A/µs
VR VDSS
Tj 150°C
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2–7
APTM20AM04FG– Rev 3 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTM20AM04FG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Torque
Mounting torque
4000
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.1
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3–7
APTM20AM04FG– Rev 3 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM20AM04FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
1200
VGS=15V
2500
10V
2000
9V
1500
8.5V
8V
1000
7.5V
7V
500
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
1000
800
600
400
TJ=25°C
200
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 186A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
400
RDS(on) vs Drain Current
1.2
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
VGS=10V
1
VGS=20V
0.9
0.8
350
300
250
200
150
100
50
0
0
100
200
300
400
500
600
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM20AM04FG– Rev 3 October, 2012
ID, Drain Current (A)
Low Voltage Output Characteristics
3000
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 186A
2.0
1.5
1.0
0.5
0.0
-50 -25
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
1000
limited by
RDSon
100µs
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
10ms
100ms
1
-50 -25
0
25 50
75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
Coss
10000
1000
Crss
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
10000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=372A
VDS=40V
12
TJ=25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
5–7
APTM20AM04FG– Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20AM04FG
APTM20AM04FG
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
60
40
tr and tf (ns)
td(on)
120
100
80
tr
60
40
20
0
0
0
100
200 300 400 500
ID, Drain Current (A)
0
600
12
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
Eoff
Switching Energy (mJ)
6
100
200 300 400 500
ID, Drain Current (A)
600
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
Eon and Eoff (mJ)
tf
Eon
4
2
Eoff
0
VDS=133V
ID=372A
TJ=125°C
L=100µH
10
Eoff
8
6
Eon
4
2
0
100
200
300
400
500
600
0
ID, Drain Current (A)
Operating Frequency vs Drain Current
200
ZVS
150
ZCS
100
Hard
switching
50
0
50
100
150
200
250
7.5
10
12.5
300
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
250
5
Gate Resistance (Ohms)
350
300
2.5
350
ID, Drain Current (A)
1000
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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6–7
APTM20AM04FG– Rev 3 October, 2012
td(on) and td(off) (ns)
td(off)
80
20
Frequency (kHz)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
140
100
APTM20AM04FG
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM20AM04FG– Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.