APTM20AM04FG

APTM20AM04FG Phase leg MOSFET Power Module VDSS = 200V RDSon = 4m typ @ Tj = 25°C ID = 372A @ Tc = 25°C Application VBUS     Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2  G2 S2 0/VBUS    Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 372 278 1488 ±30 5 1250 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20AM04FG– Rev 3 October, 2012      APTM20AM04FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 200V Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 4 3 Max 500 2000 5 5 ±200 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 372A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 28.9 9.32 0.58 nF 560 nC 212 268 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A RG = 1.2 64 ns 88 116 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3396 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3744 µJ 3716 µJ 3944 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 372 278 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 372A IS = -372A VR = 133V diS/dt = 400A/µs IS = -372A VR = 133V diS/dt = 400A/µs Tj = 25°C 3.6 Tj = 125°C 13.6 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 372A di/dt  700A/µs VR  VDSS Tj  150°C www.microsemi.com 2–7 APTM20AM04FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM20AM04FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM20AM04FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20AM04FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 1200 VGS=15V 2500 10V 2000 9V 1500 8.5V 8V 1000 7.5V 7V 500 ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25°C 200 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 186A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 400 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 VGS=10V 1 VGS=20V 0.9 0.8 350 300 250 200 150 100 50 0 0 100 200 300 400 500 600 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM20AM04FG– Rev 3 October, 2012 ID, Drain Current (A) Low Voltage Output Characteristics 3000 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 186A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area 1000 limited by RDSon 100µs 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 100ms 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=372A VDS=40V 12 TJ=25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) 5–7 APTM20AM04FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM04FG APTM20AM04FG Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) 120 100 80 tr 60 40 20 0 0 0 100 200 300 400 500 ID, Drain Current (A) 0 600 12 VDS=133V RG=1.2Ω TJ=125°C L=100µH Eoff Switching Energy (mJ) 6 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tf Eon 4 2 Eoff 0 VDS=133V ID=372A TJ=125°C L=100µH 10 Eoff 8 6 Eon 4 2 0 100 200 300 400 500 600 0 ID, Drain Current (A) Operating Frequency vs Drain Current 200 ZVS 150 ZCS 100 Hard switching 50 0 50 100 150 200 250 7.5 10 12.5 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2Ω TJ=125°C TC=75°C 250 5 Gate Resistance (Ohms) 350 300 2.5 350 ID, Drain Current (A) 1000 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM20AM04FG– Rev 3 October, 2012 td(on) and td(off) (ns) td(off) 80 20 Frequency (kHz) VDS=133V RG=1.2Ω TJ=125°C L=100µH 140 100 APTM20AM04FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7–7 APTM20AM04FG– Rev 3 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.