APTM20AM05FG

APTM20AM05F Phase leg MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · G1 VBUS 0/VBUS OUT S1 · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits S2 · · · · G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 317 237 1268 ±30 5 1136 89 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20AM05F– Rev 1 May, 2004 Symbol VDSS APTM20AM05F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA Tj = 25°C Tj = 125°C VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Min 200 Typ VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V 3 Max Unit V 500 2000 5 5 ±200 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 300A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 172 188 28 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2W Rise Time Typ 27.4 8.72 0.38 448 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 1852 µJ 1820 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 2432 µJ 2124 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 300A IS = -300A VR = 100V diS/dt = 400A/µs Tj = 25°C Tj = 125°C Tj = 25°C 4.28 Tj = 125°C 11.6 Max 317 234 1.3 8 220 420 Unit A V V/ns ns µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 300A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM20AM05F– Rev 1 May, 2004 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM20AM05F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 800 7.5V 600 7V 400 6.5V 6V 200 ID, Drain Current (A) 600 400 TJ=25°C 200 TJ=125°C 5.5V 0 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.2 320 Normalized to VGS=10V @ 158.5A 1.15 1.1 VGS=10V 1.05 1 VGS=20V 0.95 0.9 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance T J=-55°C 280 240 200 160 120 80 40 0 0 100 200 300 ID, Drain Current (A) 400 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM20AM05F– Rev 1 May, 2004 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 800 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 0.7 1000 limited by RDSon 100µs 100 1ms 10ms 10 DC line Single pulse TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss Coss 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 158.5A 10000 1.2 1.1 ON resistance vs Temperature 2.5 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25°C V =100V DS 8 VDS=160V 6 4 2 0 0 APT website – http://www.advancedpower.com 100 200 300 400 500 Gate Charge (nC) 5–6 APTM20AM05F– Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM05F APTM20AM05F Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=1.2Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 50 150 250 350 450 550 50 150 ID, Drain Current (A) 3 450 550 6 Eon Switching Energy (mJ) Eoff 2 1 0 VDS=133V ID=300A TJ=125°C L=100µH 5.5 5 4.5 Eoff Eon 4 3.5 3 2.5 2 50 150 250 350 450 550 0 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2Ω TJ=125°C 250 200 150 100 50 0 30 70 110 150 190 230 ID, Drain Current (A) 5 7.5 10 12.5 15 Gate Resistance (Ohms) 350 300 2.5 270 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20AM05F– Rev 1 May, 2004 Eon and Eoff (mJ) 4 350 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=1.2Ω TJ=125°C L=100µH 250 ID, Drain Current (A) 5 Frequency (kHz) tf 40 td(on) 20 VDS=133V RG=1.2Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current