APTM20AM08FTG

APTM20AM08FTG VDSS = 200V RDSon = 8m typ @ Tj = 25°C ID = 208A @ Tc = 25°C Phase leg MOSFET Power Module VBUS NTC2 Q1 G1 S1 OUT Q2 G2 S2 0/VBU S NTC1 Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - Lead frames for power connections  Internal thermistor for temperature monitoring  High level of integration Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20AM08FTG – Rev 3 October, 2012 Symbol VDSS APTM20AM08FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 8 3 Max 375 1500 10 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 208A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 14.4 4.66 0.29 nF 280 nC 106 134 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5 64 ns 88 116 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1698 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1872 µJ 1858 µJ 1972 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 208 155 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 208A IS = - 208A VR = 133V diS/dt = 200A/µs Tj = 25°C 1.8 Tj = 125°C 6.8 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR  VDSS Tj  150°C IS  - 208A di/dt  700A/µs www.microsemi.com 2–7 APTM20AM08FTG – Rev 3 October, 2012 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM20AM08FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ Max 0.16 150 125 100 4.7 160 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM20AM08FTG – Rev 3 October, 2012 SP4 Package outline (dimensions in mm) APTM20AM08FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 600 VGS=15V 10V 1000 ID, Drain Current (A) 9V 800 8.5V 600 8V 7.5V 400 7V 200 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25°C 100 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 VGS=10V 1 VGS=20V 0.9 200 150 100 50 0.8 0 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM20AM08FTG – Rev 3 October, 2012 ID, Drain Current (A) 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100µs 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 100ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 Ciss 10000 Coss 1000 Crss 100 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25°C VDS=100V 10 8 VDS=160V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5–7 APTM20AM08FTG – Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM08FTG APTM20AM08FTG Delay Times vs Current Rise and Fall times vs Current 160 120 60 120 tr and tf (ns) td(on) and td(off) (ns) td(off) VDS=133V RG=2.5Ω TJ=125°C L=100µH 80 td(on) 40 100 tf 80 tr 60 40 20 20 0 0 0 50 0 100 150 200 250 300 350 ID, Drain Current (A) 6 VDS=133V RG=2.5Ω TJ=125°C L=100µH Eoff Switching Energy (mJ) 3 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 4 Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH 140 100 Eon 2 1 VDS=133V ID=208A TJ=125°C L=100µH 5 Eoff 4 3 Eon 2 Eoff 0 1 50 100 150 200 250 300 350 0 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) Frequency (kHz) 300 250 150 ZVS 100 50 VDS=133V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS Hard switching 0 25 50 75 10 15 20 25 Source to Drain Diode Forward Voltage 350 200 5 Gate Resistance (Ohms) 1000 TJ=150°C 100 TJ=25°C 10 1 100 125 150 175 200 ID, Drain Current (A) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM20AM08FTG – Rev 3 October, 2012 0 APTM20AM08FTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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