APTM20AM10FTG
VDSS = 200V
RDSon = 10mΩ typ @ Tj = 25°C
ID = 175A @ Tc = 25°C
Phase leg
MOSFET Power Module
NT C2
Q1
G1
S1
OUT
Q2
G2
S2
0/VBU S
G2
S2
VBUS
0/VBUS
NT C1
OUT
OUT
S1
S2
NTC2
G1
G2
NTC1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
175
131
700
±30
12
694
89
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM20AM10FTG – Rev 3 July, 2006
VBUS
APTM20AM10FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Min
VGS = 10V, ID = 87.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
10
3
Min
VGS = 10V
VBus = 100V
ID = 150A
Typ
13.7
4.36
0.19
224
Unit
Max
Unit
µA
mΩ
V
nA
nF
nC
94
28
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
R G = 2.5Ω
56
99
926
1216
µJ
1062
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 150A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
µJ
910
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, R G = 2.5Ω
Test Conditions
ns
81
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, R G = 2.5Ω
IS = - 150A
VR = 133V
diS/dt = 200A/µs
Max
200
1000
12
5
±150
86
Source - Drain diode ratings and characteristics
Symbol
IS
Typ
Tj = 25°C
Tj = 125°C
2.14
5.8
Max
175
131
1.3
8
220
420
Unit
A
V
V/ns
ns
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 150A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
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2–6
APTM20AM10FTG – Rev 3 July, 2006
Symbol
APTM20AM10FTG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
9V
400
ID, Drain Current (A)
7.5V
300
7V
200
6.5V
6V
100
300
200
T J=25°C
100
TJ =125°C
5.5V
0
TJ =-55°C
0
0
5
10
15
20
25
2
3
4
5
6
7
8
9
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS (on) vs Drain Current
1.2
180
Normalized to
V GS=10V @ 87.5A
1.15
1.1
I D, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
VGS =10V
1.05
1
VGS =20V
0.95
0.9
160
140
120
100
80
60
40
20
0
0
40
80
120 160 200
I D, Drain Current (A)
240
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25
50
75
100
125
TC, Case Temperature (°C)
150
4–6
APTM20AM10FTG – Rev 3 July, 2006
I D, Drain Current (A)
V GS=15&10V
Transfert Characteristics
400
500
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
VGS=10V
ID= 87.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
limited by
RDSon
100µs
100
1ms
10ms
10
Single pulse
TJ=150°C
TC=25°C
0.7
0.6
DC line
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
0
1
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
ON resistance vs Temperature
2.5
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
V DS =40V
I D=150A
10
TJ=25°C
V DS =100V
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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8
V DS =160V
6
4
2
0
0
50
100
150
200
250
Gate Charge (nC)
5–6
APTM20AM10FTG – Rev 3 July, 2006
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20AM10FTG
APTM20AM10FTG
Rise and Fall times vs Current
90
160
80
140
td(off)
70
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
60
50
40
30
100
80
tr
60
20
10
0
0
50
100
150
200
250
300
0
50
I D, Drain Current (A)
Eon
Eoff
1
0.5
0
250
300
VDS=133V
ID=150A
TJ=125°C
L=100µH
2.5
Eoff
Eon
2
Eon
1.5
1
50
100
150
200
250
0
300
Operating Frequency vs Drain Current
ZVS
200
IDR, Reverse Drain Current (A)
350
250
V DS=133V
D=50%
R G=2.5Ω
T J=125°C
T C=75°C
ZCS
150
Hard
Switching
100
50
0
20
40
10
15
20
Gate Resistance (Ohms)
ID, Drain Current (A)
300
5
Source to Drain Diode Forward Voltage
1000
100
TJ =150°C
TJ =25°C
10
60 80 100 120 140 160
ID, Drain Current (A)
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM20AM10FTG – Rev 3 July, 2006
0
Frequency (kHz)
200
3
Switching Energy (mJ)
Eon and Eoff (mJ)
1.5
150
Switching Energy vs Gate Resistance
Switching Energy vs Current
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
100
ID, Drain Current (A)
2.5
2
tf
40
td(on)
20
VDS=133V
RG=2.5Ω
T J=125°C
L=100µH
120
t r and tf (ns)
td(on) and td(off) (ns)
Delay Times vs Current