APTM20AM10STG

APTM20AM10STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 12 694 89 50 2500 Unit V A V mΩ W A July, 2006 VBUS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20AM10STG – Rev 3 OUT 0/ VBUS VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C APTM20AM10STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Min Unit Max Unit µA mΩ V nA nF nC 94 28 56 99 926 1216 IF = 90A IF = 180A Typ Max 250 750 90 1.1 1.4 Tj = 125°C 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 99 Tj = 125°C 450 www.microsemi.com µJ 1062 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C µJ 910 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω Test Conditions ns 81 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω IF = 90A VR = 133V di/dt = 600A/µs Typ 13.7 4.36 0.19 224 Max 200 1000 12 5 ±150 86 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A R G = 2.5Ω IF = 90A trr 10 VGS = 10V VBus = 100V ID = 150A VR=200V Typ 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Min Tj = 25°C Tj = 125°C Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–6 APTM20AM10STG – Rev 3 Symbol APTM20AM10STG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 ID, Drain Current (A) 7.5V 300 7V 200 6.5V 6V 100 300 200 T J=25°C 100 TJ =125°C 5.5V 0 TJ =-55°C 0 0 5 10 15 20 25 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 1.2 180 Normalized to V GS=10V @ 87.5A 1.15 1.1 I D, DC Drain Current (A) VGS =10V 1.05 1 VGS =20V 0.95 0.9 160 140 120 100 80 60 40 20 0 0 40 80 120 160 200 I D, Drain Current (A) 240 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4–6 APTM20AM10STG – Rev 3 I D, Drain Current (A) V GS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) VGS=10V ID= 87.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 1.2 1.1 1.0 0.9 0.8 limited by RDSon 100µs 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 0.7 0.6 DC line 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25°C V DS =100V 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 V DS =160V 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20AM10STG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20AM10STG APTM20AM10STG Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 50 100 150 200 250 300 0 50 I D, Drain Current (A) Eon Eoff 1 0.5 0 250 300 VDS=133V ID=150A TJ=125°C L=100µH 2.5 Eoff Eon 2 Eon 1.5 1 0 50 100 150 200 250 0 300 300 ZVS 250 200 V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS 150 Hard Switching 100 50 0 40 10 15 20 Source to Drain Diode Forward Voltage 1000 100 TJ =150°C TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) 60 80 100 120 140 160 ID, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20AM10STG – Rev 3 July, 2006 20 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 350 5 Gate Resistance (Ohms) ID, Drain Current (A) Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 40 td(on) 20 VDS=133V RG=2.5Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current