APTM20DUM05G

APTM20DUM05G Dual common source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 VDSS = 200V RDSon = 5mΩ typ @ Tj = 25°C ID = 317A @ Tc = 25°C Q2 G1 G2 S1 S2 S G1 D1 S D2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 317 237 1268 ±30 6 1136 89 50 2500 Unit V A V mΩ W A July, 2006 Absolute maximum ratings mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DUM05G – Rev 3 S2 G2 APTM20DUM05G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 200V T j = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Qrr Reverse Recovery Charge 5 3 Min VGS = 10V VBus = 100V ID = 300A Typ 27.4 8.72 0.38 448 Max Unit µA mΩ V nA nF nC 28 56 ns 81 99 1852 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2Ω 2432 µJ 1820 µJ 2124 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 300A IS = -300A, VR = 100V diS/dt = 400A/µs Unit 188 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2Ω Test Conditions Max 400 2000 6 5 ±200 172 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A R G = 1.2Ω Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Typ Max 317 237 1.3 5 Unit A 284 V V/ns ns 12.24 µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 300A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTM20DUM05G – Rev 3 Symbol APTM20DUM05G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 800 7.5V 600 7V 400 6.5V 6V 200 ID, Drain Current (A) 600 400 T J=25°C 200 TJ =125°C 5.5V 0 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 320 1.2 Normalized to V GS=10V @ 158.5A 1.15 1.1 VGS=10V 1.05 1 VGS=20V 0.95 0.9 I D, DC Drain Current (A) 280 240 200 160 120 80 40 0 0 100 200 300 I D, Drain Current (A) 400 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 RDS(on) Drain to Source ON Resistance TJ =-55°C 4–6 APTM20DUM05G – Rev 3 I D, Drain Current (A) VGS=15&10V Transfert Characteristics 800 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 VGS=10V ID= 158.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 0.7 1000 limited by RDSon 100µs 100 1ms 10ms Single pulse TJ=150°C TC=25°C 10 0.6 DC line 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss Coss 10000 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V I D=300A 10 TJ=25°C VDS=100V 8 V DS =160V 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Maximum Safe Operating Area 10000 1.2 1.1 ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20DUM05G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20DUM05G APTM20DUM05G Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=1.2Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 50 150 250 350 450 550 50 150 I D, Drain Current (A) 3 Eon Switching Energy (mJ) Eon and Eoff (mJ) 4 350 450 550 Switching Energy vs Gate Resistance 6 Switching Energy vs Current VDS=133V RG=1.2Ω T J=125°C L=100µH 250 ID, Drain Current (A) 5 Eoff 2 1 0 V DS=133V ID=300A T J=125°C L=100µH 5.5 5 4.5 Eoff Eon 4 3.5 3 2.5 Eoff 2 50 150 250 350 450 0 550 ID, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) 300 250 200 ZVS 150 V DS=133V D=50% R G=1.2Ω T J=125°C T C=75°C 100 50 0 70 5 7.5 10 12.5 15 ZCS Hard Switching 110 150 190 230 270 I D, Drain Current (A) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 10 TJ =25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20DUM05G – Rev 3 July, 2006 30 2.5 Gate Resistance (Ohms) 350 Frequency (kHz) tf 40 td(on) 20 V DS=133V RG=1.2Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current