APTM20HM10FG

APTM20HM10FG Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 10m typ @ Tj = 25°C ID = 175A @ Tc = 25°C Application VBUS Q1     Q3 S1 OUT2 G3 OUT1 G1 S3 Q2 Features Q4  G4 G2 S4 S2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 0/VBUS    Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits      Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 12 694 89 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20HM10FG– Rev 3 October, 2012 Symbol VDSS APTM20HM10FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 10 3 Max 200 1000 12 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 224 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5 28 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 13.7 4.36 0.19 nF nC 86 94 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 926 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1216 µJ 910 µJ 1062 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 175 131 1.3 8 220 Tj = 125°C 420 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 150A IS = -150A VR = 133V diS/dt = 200A/µs Tj = 25°C 2.14 Tj = 125°C 5.8 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 150A di/dt  700A/µs VR  VDSS Tj  150°C www.microsemi.com 2–7 APTM20HM10FG– Rev 3 October, 2012 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM20HM10FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.18 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM20HM10FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20HM10FG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 ID, Drain Current (A) 7.5V 300 7V 200 6.5V 6V 100 300 200 TJ=25°C 100 TJ=125°C 5.5V 0 TJ=-55°C 0 0 5 10 15 20 25 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 180 1.2 Normalized to VGS=10V @ 87.5A 1.15 1.1 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) VGS=10V 1.05 1 VGS=20V 0.95 0.9 160 140 120 100 80 60 40 20 0 0 40 80 120 160 200 ID, Drain Current (A) 240 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM20HM10FG– Rev 3 October, 2012 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature VGS=10V ID= 87.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) 1.2 VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature 2.5 1.1 1.0 0.9 0.8 limited by RDSon 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 0.7 0.6 -50 -25 0 25 50 1 C, Capacitance (pF) 10000 Coss 1000 Crss 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) Ciss DC line 1 75 100 125 150 Capacitance vs Drain to Source Voltage 100000 100µs 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=150A 10 TJ=25°C VDS=100V 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=160V 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 5–7 APTM20HM10FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM10FG APTM20HM10FG Rise and Fall times vs Current 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 50 100 150 200 250 300 0 50 ID, Drain Current (A) Eon Eoff 1 0.5 0 250 300 VDS=133V ID=150A TJ=125°C L=100µH 2.5 Eoff Eon 2 Eon 1.5 1 50 100 150 200 250 0 300 ID, Drain Current (A) ZVS 250 200 VDS=133V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 150 Hard Switching 100 50 0 20 40 IDR, Reverse Drain Current (A) 300 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 5 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) 60 80 100 120 140 160 ID, Drain Current (A) www.microsemi.com 6–7 APTM20HM10FG– Rev 3 October, 2012 0 Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 40 td(on) 20 VDS=133V RG=2.5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current 90 APTM20HM10FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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