APTM20HM16FTG
Full - Bridge
MOSFET Power Module
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
VBUS
Q1
Q3
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
G3
G1
S1
OUT1
S3
OUT2
Q2
Q4
G2
G4
S2
S4
NTC1
0/VBU S
VDSS = 200V
RDSon = 16m typ @ Tj = 25°C
ID = 104A @ Tc = 25°C
NTC2
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
104
77
416
±30
19
390
104
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM20HM16FTG – Rev 3 October, 2012
Symbol
VDSS
APTM20HM16FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
16
3
Max
250
1000
19
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID =104A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5Ω
32
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
7220
2330
146
pF
nC
53
67
64
ns
88
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
849
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
936
µJ
929
µJ
986
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
104
77
1.3
5
230
Tj = 125°C
450
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 104A
IS = - 104A
VR = 133V
diS/dt = 100A/µs
Tj = 25°C
0.9
Tj = 125°C
3.4
Unit
A
V
V/ns
ns
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR VDSS
Tj 150°C
IS - 104A di/dt 700A/µs
www.microsemi.com
2–7
APTM20HM16FTG – Rev 3 October, 2012
Symbol Characteristic
Continuous Source current
IS
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTM20HM16FTG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
Typ
Max
0.32
150
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature
1
1 RT: Thermistor value at T
exp B25 / 85
T25 T
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM20HM16FTG – Rev 3 October, 2012
SP4 Package outline (dimensions in mm)
APTM20HM16FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.9
0.3
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
600
10V
500
9V
400
8.5V
300
8V
7.5V
200
7V
100
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
200
150
100
TJ=25°C
50
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 52A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.2
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
VGS=10V
1
VGS=20V
0.9
0.8
100
80
60
40
20
0
0
25
50
75
100
125
150
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
4–7
APTM20HM16FTG – Rev 3 October, 2012
ID, Drain Current (A)
Transfert Characteristics
300
VGS=15V
ID, Drain Current (A)
700
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 52A
2.0
1.5
1.0
0.5
0.0
-50 -25
1.1
1.0
0.9
0.8
0.7
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100
100µs
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
100ms
1
-50 -25
0
25 50
75 100 125 150
1
TC, Case Temperature (°C)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
Ciss
10000
Coss
1000
Crss
100
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=104A
VDS=40V
12
TJ=25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
5–7
APTM20HM16FTG – Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20HM16FTG
APTM20HM16FTG
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
60
40
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
0
0
0
25
0
50 75 100 125 150 175
ID, Drain Current (A)
3
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Switching Energy (mJ)
1.5
25
50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
Eon
1
0.5
Eoff
0
VDS=133V
ID=104A
TJ=125°C
L=100µH
2.5
Eoff
2
1.5
Eon
1
0.5
0
25
50
75
100 125 150 175
0
ID, Drain Current (A)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
250
200
ZCS
150
VDS=133V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
50
ZVS
Hard
switching
0
25
38
50
63
75
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
88
1000
100
TJ=150°C
TJ=25°C
10
100
ID, Drain Current (A)
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
6–7
APTM20HM16FTG – Rev 3 October, 2012
td(on) and td(off) (ns)
td(off)
80
20
Eon and Eoff (mJ)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
140
100
APTM20HM16FTG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
7–7
APTM20HM16FTG – Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
