APTM20HM20FTG

APTM20HM20FTG Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q3 Q1 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance • Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G3 G1 S1 OUT1 S3 OUT2 Q2 Q4 G2 G4 S2 S4 NTC1 0/VBU S VDSS = 200V RDSon = 20mΩ typ @ Tj = 25°C ID = 89A @ Tc = 25°C NTC2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 89 66 356 ±30 24 357 89 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20HM20FTG – Rev 4 October, 2014 Symbol VDSS APTM20HM20FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min 200 Typ Max 20 250 1000 24 5 ±100 mΩ V nA Max Unit Tj = 25°C Tj = 125°C VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Unit V µA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn-off Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz Min pF 112 VGS = 10V VBus = 100V ID = 75A 43 nC 47 28 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 75A RG = 5Ω VGS = 15V VBus = 133V ID = 75A RG = 5Ω Typ 6850 2180 97 56 ns 81 99 Tj = 25°C 455 µJ Tj = 125°C 531 µJ Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 75A IS = - 75A VR = 133V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.07 2.9 Max 89 66 1.3 8 220 420 Unit A V V/ns ns µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 75A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–7 APTM20HM20FTG – Rev 4 October, 2014 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTM20HM20FTG Thermal and package characteristics Symbol RthJC VISOL TJ TJOP TSTG TC Torque Wt Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Max 0.35 150 TJmax -25 125 100 4.7 160 Typ 50 5 3952 4 Max Unit °C/W V °C N.m g Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦⎥ ⎣⎢ See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM20HM20FTG – Rev 4 October, 2014 SP4 Package outline (dimensions in mm) APTM20HM20FTG Typical Performance Curve Thermal Im pedance (°C/W) Maxim um Effective Transient Thermal Im pedance, Junction to Case vs Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 9V 200 ID, Drain Current (A) 7.5V 150 7V 100 6.5V 6V 50 VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cy cle 160 120 80 40 TJ=125°C TJ=25°C 5.5V 0 0 5 10 15 20 0 25 2 V DS , Drain to Source Voltage (V) RDS (on) vs Drain Current 4 5 6 7 8 9 DC Drain Current vs Case Temperature 1.1 100 Normalized to VGS=10V @ 44.5A ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 3 V GS, Gate to Source Voltage (V) VGS=10V 1.05 1 VGS=20V 0.95 0.9 0 20 40 60 80 100 120 80 60 40 20 0 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM20HM20FTG – Rev 4 October, 2014 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 200 250 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 50 75 100 125 150 VGS=10V I D= 44.5A 2.0 1.5 1.0 0.5 25 TJ, Junction Temperature (°C) ID, Drain Current (A) 0.90 0.85 0.80 0.75 100 100 125 Coss 1000 Crss 10 0 10 20 30 40 DC line 1 1 V GS, Gate to Source Voltage (V) C, Capacitance (pF) Ciss 10ms Single pulse TJ=150°C TC=25°C 150 Capacitance vs Drain to Source Voltage 100000 100 150 1ms TC, Case Temperature (°C) 10000 125 100µs 10 0.65 75 100 limited by RDSon 0.70 50 75 Maxim um Safe Operating Area 1000 0.95 25 50 T J, Junction Temperature (°C) Threshold Voltage vs Temperature 1.00 V GS (TH), Threshold Voltage (Norm alized) ON resistance vs Temperature 2.5 10 100 1000 V DS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A TJ =25°C 10 50 V DS, Drain to Source Voltage (V) VDS=100V 8 VDS=160V 6 4 2 0 0 25 50 75 100 125 Gate Charge (nC) www.microsemi.com 5–7 APTM20HM20FTG – Rev 4 October, 2014 25 RDS (on), Drain to Source ON resistance (Norm alized) BV DSS, Drain to Source Breakdown Voltage (Norm alized) APTM20HM20FTG APTM20HM20FTG Rise and Fall tim es vs Current 90 160 80 140 td(off) 70 VDS=133V R G =5Ω TJ=125°C L=100µH 60 50 40 30 VDS=133V R G =5Ω TJ=125°C L=100µH 120 t r and t f (ns) t d(on) and t d(off) (ns) Delay Tim es vs Current 100 80 tr 60 40 td(on) 20 20 10 0 25 50 75 100 125 0 150 0 25 ID, Drain Current (A) VDS=133V R G =5Ω TJ=125°C L=100µH 100 125 150 VDS=133V I D=75A TJ=125°C L=100µH 1250 Eoff (µJ) 800 75 Sw itching Energy vs Gate Resistance 1500 Sw itching Energy vs Current 1000 50 ID, Drain Current (A) 1200 Eoff (µJ) tf 600 400 1000 750 200 0 500 0 25 50 75 100 125 150 5 Operating Frequency vs Drain Current VDS=133V D=50% R G =5Ω TJ=125°C TC=75°C 200 ZVS 150 20 25 30 35 40 100 50 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 TJ=25°C 1 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 V SD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM20HM20FTG – Rev 4 October, 2014 Frequency (kHz) IDR, Reverse Drain Current (A) 350 250 15 Gate Resistance (Ohms) ID, Drain Current (A) 300 10 APTM20HM20FTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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