APTM20HM20STG

APTM20HM20STG Full bridge Series & parallel diodes MOSFET Power Module Application  Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies VBUS CR1A CR3A CR1B Q1 CR3B Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 NTC1 0/VBU S VDSS = 200V RDSon = 20m typ @ Tj = 25°C ID = 89A @ Tc = 25°C NTC2 Features  Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - Lead frames for power connections  Internal thermistor for temperature monitoring  High level of integration Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 89 66 356 ±30 24 357 89 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20HM20STG – Rev 5 October, 2012 Symbol VDSS APTM20HM20STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min VGS = 0V,VDS = 200V Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ 20 3 Max 100 500 24 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 112 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 75A Td(on) Turn-on Delay Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 75A RG = 5 28 Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 6850 2180 97 pF nC 43 47 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 75A, RG = 5Ω 463 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 75A, RG = 5Ω 608 µJ 455 µJ 531 Diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=200V DC Forward Current Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Tj = 25°C Tj = 125°C Tc = 85°C IF = 30A IF = 60A IF = 30A trr Min 200 IF = 30A VR = 133V di/dt = 200A/µs Typ 250 500 30 1.1 1.4 Tj = 125°C 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 www.microsemi.com Max Unit V µA A 1.15 V ns nC 2–7 APTM20HM20STG – Rev 5 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM20HM20STG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To Heatsink M5 4000 -40 -40 -40 2.5 Max 0.35 1.2 Unit °C/W V 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM20HM20STG – Rev 5 October, 2012 SP4 Package outline (dimensions in mm) APTM20HM20STG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 9V 200 ID, Drain Current (A) 7.5V 150 7V 100 6.5V 6V 50 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 TJ=25°C 40 TJ=125°C 5.5V 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 100 1.2 Normalized to VGS=10V @ 44.5A 1.15 1.1 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 VGS=10V 1.05 1 VGS=20V 0.95 0.9 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM20HM20STG – Rev 5 October, 2012 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 200 250 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature VGS=10V ID= 44.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) 1.2 VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature 2.5 1.1 1.0 0.9 0.8 limited by RDSon 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 0.7 0.6 DC line 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 100µs 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25°C VDS=100V 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=160V 6 4 2 0 0 25 50 75 100 125 Gate Charge (nC) 5–7 APTM20HM20STG – Rev 5 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM20STG APTM20HM20STG Rise and Fall times vs Current 160 80 140 td(off) 70 VDS=133V RG=5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 25 50 75 100 125 150 0 25 ID, Drain Current (A) VDS=133V RG=5Ω TJ=125°C L=100µH Eon Switching Energy (µJ) 100 125 150 Eoff 600 400 200 0 VDS=133V ID=75A TJ=125°C L=100µH 1250 1000 Eoff Eon 750 500 Eoff 250 0 25 50 75 100 125 0 150 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=133V D=50% RG=5Ω TJ=125°C TC=75°C 250 200 ZVS 150 ZCS 100 Hard switching 50 0 10 20 10 15 20 25 30 35 40 Gate Resistance (Ohms) 350 300 5 30 40 50 60 70 ID, Drain Current (A) Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 TJ=25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) 80 www.microsemi.com 6–7 APTM20HM20STG – Rev 5 October, 2012 Eon and Eoff (µJ) 800 75 Switching Energy vs Gate Resistance 1500 Switching Energy vs Current 1000 50 ID, Drain Current (A) 1200 Frequency (kHz) tf 40 td(on) 20 VDS=133V RG=5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current 90 APTM20HM20STG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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