APTM50AM19FG

APTM50AM19FG Phase leg MOSFET Power Module VDSS = 500V RDSon = 19m typ @ Tj = 25°C ID = 163A @ Tc = 25°C Application VBUS     Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2  G2 S2 0/VBUS    Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits      Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 163 122 652 ±30 22.5 1136 46 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50AM19FG– Rev 3 October, 2012 Symbol VDSS APTM50AM19FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 19 3 Max 200 1000 22.5 5 ±200 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 163A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 22.4 4.8 0.36 nF 492 nC 132 260 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A RG = 1 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 3020 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 4964 µJ 2904 µJ 3384 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 163A IS = -163A VR = 333V diS/dt = 400A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 7.6 Tj = 125°C 22.8 Max 163 122 1.3 15 Unit A V V/ns ns µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 163A di/dt  700A/µs VR  VDSS Tj  150°C www.microsemi.com 2–7 APTM50AM19FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM50AM19FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.11 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM50AM19FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50AM19FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 600 8V VGS=10&15V 500 ID, Drain Current (A) ID, Drain Current (A) 10 500 700 7.5V 400 7V 300 6.5V 200 6V 100 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 300 200 TJ=25°C 100 TJ=125°C 5.5V 0 TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 81.5A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 180 VGS=10V 1.10 1.05 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 160 140 120 100 80 60 40 20 0.80 0 0 100 200 300 400 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50AM19FG– Rev 3 October, 2012 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=81.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100 100µs limited by RDSon 10 1ms Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss C, Capacitance (pF) 25 1000 1.2 100000 0 TJ, Junction Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=163A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 www.microsemi.com 0 80 160 240 320 400 480 560 640 Gate Charge (nC) 5–7 APTM50AM19FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM19FG APTM50AM19FG Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=1Ω TJ=125°C L=100µH 100 80 VDS=333V RG=1Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) 20 80 60 40 tr 20 0 0 20 60 100 140 180 220 260 20 60 100 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH 8 6 Eon Eoff 4 180 220 260 Switching Energy vs Gate Resistance 16 Switching Energy (mJ) Switching Energy (mJ) 10 140 ID, Drain Current (A) Switching Energy vs Current 2 VDS=333V ID=163A TJ=125°C L=100µH 14 12 10 Eoff 8 Eon 6 4 Eoff 2 0 0 20 60 100 140 180 220 0 260 ID, Drain Current (A) ZVS 300 250 ZCS 200 VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C 150 100 50 Hard switching 0 0 20 40 60 80 IDR, Reverse Drain Current (A) 350 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 Frequency (kHz) tf 1000 Source to Drain Diode Forward Voltage TJ=150°C 100 10 TJ=25°C 1 0.2 0.4 0.6 0.8 100 120 140 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM50AM19FG– Rev 3 October, 2012 td(on) and td(off) (ns) 100 APTM50AM19FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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