APTM50AM38FTG
VDSS = 500V
RDSon = 38mΩ typ @ Tj = 25°C
ID = 90A @ Tc = 25°C
Phase leg
MOSFET Power Module
Q1
G1
S1
OUT
Q2
G2
S2
0/VBU S
G2
S2
VBUS
0/VBUS
NT C1
OUT
OUT
S1
S2
NTC2
G1
G2
NTC1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
90
67
360
±30
45
694
46
50
2500
Unit
V
A
V
mΩ
W
A
July, 2006
NT C2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM50AM38FTG – Rev 2
VBUS
APTM50AM38FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
Min
VGS = 0V,VDS = 500V
Tj = 25°C
VGS = 0V,VDS = 400V
T j = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IS
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
38
3
Min
VGS = 10V
VBus = 250V
ID = 90A
Typ
11.2
2.4
0.18
246
Unit
Max
Unit
µA
mΩ
V
nA
nF
nC
130
18
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
R G = 2Ω
35
77
1510
µJ
1452
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, R G = 2Ω
Test Conditions
ns
87
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, R G = 2Ω
2482
µJ
1692
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 90A
IS = - 90A
VR = 333V
diS/dt = 200A/µs
Max
200
1000
45
5
±150
66
Source - Drain diode ratings and characteristics
Symbol
Typ
Max
90
67
1.3
15
Unit
A
V
V/ns
Tj = 25°C
Tj = 125°C
233
499
ns
Tj = 25°C
Tj = 125°C
3.8
11.4
µC
July, 2006
IDSS
Characteristic
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 90A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
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2–6
APTM50AM38FTG – Rev 2
Symbol
APTM50AM38FTG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
150
100
TJ=25°C
50
T J=125°C
5.5V
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 45A
1.15
VGS=10V
1.10
1.05
1
2
3
4
5
6
7
VGS, Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature
100
I D, DC Drain Current (A)
1.20
TJ=-55°C
V GS=20V
1.00
0.95
0.90
0.85
0.80
80
60
40
20
0
0
50
100
150
200
ID, Drain Current (A)
www.microsemi.com
25
50
75
100
125
TC, Case Temperature (°C)
150
July, 2006
I D, Drain Current (A)
10
250
350
RDS(on) Drain to Source ON Resistance
1
4–6
APTM50AM38FTG – Rev 2
Thermal Impedance (°C/W)
0.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=45A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
100µs
limited by R DSon
100
10
0.6
1ms
Single pulse
TJ =150°C
TC=25°C
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
V DS =100V
I D=90A
12 T =25°C
J
V =250V
DS
10
50
VDS=400V
8
6
4
2
0
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
July, 2006
C, Capacitance (pF)
limited by RDSon
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5–6
APTM50AM38FTG – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM38FTG
APTM50AM38FTG
Delay Times vs Current
Rise and Fall times vs Current
120
100
80
60
40
V DS =333V
RG =2Ω
T J=125°C
L=100µH
td(on)
20
80
60
40
tr
0
20
40
60
80 100 120
ID, Drain Current (A)
140
20
VDS=333V
RG=2Ω
T J=125°C
L=100µH
4
3
80
100
120
140
Switching Energy vs Gate Resistance
Eon
Eoff
2
60
8
Switching Energy (mJ)
5
40
I D, Drain Current (A)
Switching Energy vs Current
1
VDS=333V
ID=90A
TJ=125°C
L=100µH
7
6
5
Eoff
4
Eon
3
2
Eoff
1
0
0
20
40
60
80
100
120
0
140
I D, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
350
V DS=333V
D=50%
R G=2Ω
T J=125°C
T C=75°C
ZVS
300
250
200
150
ZCS
100
Hard
switching
50
0
20
30
40
50
60
5
10
15
20
25
Gate Resistance (Ohms)
400
Frequency (kHz)
tf
20
0
Switching Energy (mJ)
VDS=333V
RG=2Ω
T J=125°C
L=100µH
100
tr and t f (ns)
t d(on) and td(off) (ns)
td(off)
70
1000
Source to Drain Diode Forward Voltage
T J=150°C
100
10
80
TJ=25°C
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM50AM38FTG – Rev 2
July, 2006
ID, Drain Current (A)