APTM50AM38SCTG

APTM50AM38SCTG VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NTC2 VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated G1 OUT S1 Q2 • G2 0/VBU S S2 NTC1 • • • • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTM50AM38SCTG – Rev 4 October, 2013 Symbol VDSS APTM50AM38SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 38 3 Max 200 1000 45 5 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 11.2 2.36 0.18 nF 246 VGS = 10V VBus = 250V ID = 90A 66 nC 130 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2Ω 18 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 906 35 ns 87 77 µJ 1452 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 1490 µJ 1692 0.18 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR = 600V DC Forward Current Tc = 85°C IF = 90A IF = 180A Diode Forward Voltage IF = 90A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 90A VR = 400V di/dt = 600A/µs Min 600 Typ 250 90 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 390 Tj = 125°C 2100 Junction to Case Thermal Resistance 1.8 V ns nC 0.45 www.microsemi.com °C/W 2–9 APTM50AM38SCTG – Rev 4 October, 2013 Symbol VRRM IRM IF APTM50AM38SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 250 500 50 1.6 2.0 1000 5000 IF DC Forward Current VF Diode Forward Voltage IF = 50A QC Total Capacitive Charge IF = 50A, VR = 300V di/dt =1400A/µs 70 Q Total Capacitance f = 1MHz, VR = 200V 325 f = 1MHz, VR = 400V 250 RthJC Junction to Case Thermal Resistance Unit V µA A 1.8 2.4 V nC pF 0.5 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ www.microsemi.com 3–9 APTM50AM38SCTG – Rev 4 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTM50AM38SCTG SP4 Package outline (dimensions in mm) www.microsemi.com 4–9 APTM50AM38SCTG – Rev 4 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM50AM38SCTG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 250 8V VGS=10&15V 250 7.5V 200 7V 150 6.5V 100 6V 50 VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 TJ=125°C 5.5V 0 0 5 10 15 20 0 25 0 VDS, Drain to Source Voltage (V) VGS=10V 1.10 1.05 VGS=20V 1.00 0.95 0.90 0.85 50 100 150 4 5 6 7 8 80 60 40 20 0.80 0 3 DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance RDS(on) vs Drain Current Normalized to VGS=10V @ 2 VGS , Gate to Source Voltage (V) 1.20 1.15 1 200 ID, Drain Current (A) 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 5–9 APTM50AM38SCTG – Rev 4 October, 2013 300 ID, Drain Current (A) ID, Drain Current (A) 350 Breakdown Voltage vs Temperature 1.2 1.1 1.0 0.9 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=45A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 75 1000 1.1 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 100 limited by RDSon 10 Single pulse TJ =150°C TC=25°C 1 VGS , Gate to Source Voltage (V) Ciss Coss 1000 Crss 100 10 20 30 10 100 1000 VDS , Drain to Source Voltage (V) 10000 10 1ms 10ms 1 150 Capacitance vs Drain to Source Voltage 100000 0 100µs limited by RDSon TC, Case Temperature (°C) C, Capacitance (pF) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 40 50 Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=90A 12 TJ =25°C VDS=250V 10 VDS=400V 8 6 4 2 0 VDS , Drain to Source Voltage (V) 0 40 80 120 160 200 240 280 320 Gate Charge (nC) www.microsemi.com 6–9 APTM50AM38SCTG – Rev 4 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM50AM38SCTG APTM50AM38SCTG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 40 VDS=333V RG=2Ω TJ=125°C L=100µH td(on) 20 80 60 40 tr 20 0 0 20 40 60 80 100 120 140 20 40 60 ID, Drain Current (A) VDS=333V RG=2Ω TJ=125°C L=100µH 3 Eoff 2 100 120 140 Switching Energy vs Gate Resistance 8 Switching Energy (mJ) Switching Energy (mJ) 4 80 ID, Drain Current (A) Switching Energy vs Current Eon 1 Eoff VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 3 2 Eon 1 0 0 20 40 60 80 100 120 0 140 ID, Drain Current (A) Operating Frequency vs Drain Current 300 ZCS ZVS 250 200 150 IDR, Reverse Drain Current (A) VDS=333V D=50% RG=2Ω TJ=125°C TC=75°C 350 Hard switching 100 50 0 20 30 40 50 60 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 70 1000 100 10 Source to Drain Diode Forward Voltage TJ=150°C TJ=25°C 1 80 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 7–9 APTM50AM38SCTG – Rev 4 October, 2013 60 VDS=333V RG=2Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) 100 APTM50AM38SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1000 TJ=25°C 75 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 100 TJ=175°C 50 TJ=125°C 25 800 600 400 200 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 0 200 TJ=175°C TJ=125°C TJ=75°C TJ=25°C 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 1500 1000 500 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 8–9 APTM50AM38SCTG – Rev 4 October, 2013 C, Capacitance (pF) 2000 APTM50AM38SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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